Stimulated emission at a wavelength of $2.86 \mu$m from In(Sb, As)/In(Ga, Al)As/GaAs metamorphic quantum wells under optical pumping

Metamorphic laser heterostructures In(Sb,As)/In$_{0.81}$Ga$_{0.19}$As/In$_{0.75}$Al$_{0.25}$As with InSb/InAs/InGaAs composite quantum wells based on submonolayer InSb insertions in a $10$-nm InAs layer have been grown by molecular beam epitaxy on GaAs (001) substrates. Stimulated emission at a wavelength of $\lambda\sim 2.86 \mu$m at temperatures of $10$–$60$ K at optical pumping has been demonstrated in such structures without an optical cavity. The threshold pump power density is about $5$ kW/cm$^2$ at a temperature of $10$ K.