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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 7, Pages 26–29
DOI: https://doi.org/10.21883/PJTF.2021.07.50795.18663 (Mi pjtf4813) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Application of the scattering matrix method for calculation of impurity states in semiconductor structures

S. V. Morozovab, M. S. Zholudevab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (111 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2021.07.50795.18663
Abstract: The scattering matrix method is adapted for calculation of energy levels and charge carrier wavefunctions near impurity-defect centers. The possibility of application of this method for multiband models is exemplified by the Luttinger Hamiltonian with a Coulomb acceptor with the spherical symmetry approach. The obtained values of energy of discrete levels are in good agreement with the results of calculations performed by other methods.
Keywords: HgCdTe, impurity, narrow-band-gap semiconductors, scattering matrix.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 075-15-2020-797
This work was supported by the Ministry of Science and Higher Education of Russian Federation, grant project no. 075-15-2020-797 (13.1902.21.0024).
Received: 18.12.2020
Revised: 18.12.2020
Accepted: 21.12.2020
English version:
Technical Physics Letters, 2021, Volume 47, Issue 5, Pages 360–363
DOI: https://doi.org/10.1134/S1063785021040131
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Morozov, M. S. Zholudev, “Application of the scattering matrix method for calculation of impurity states in semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021), 26–29; Tech. Phys. Lett., 47:5 (2021), 360–363
Citation in format AMSBIB
\Bibitem{MorZho21}
\by S.~V.~Morozov, M.~S.~Zholudev
\paper Application of the scattering matrix method for calculation of impurity states in semiconductor structures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 7
\pages 26--29
\mathnet{http://mi.mathnet.ru/pjtf4813}
\crossref{https://doi.org/10.21883/PJTF.2021.07.50795.18663}
\elib{https://elibrary.ru/item.asp?id=46318386}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 5
\pages 360--363
\crossref{https://doi.org/10.1134/S1063785021040131}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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