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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1455–1458 (Mi phts6306)  
This article is cited in 3 scientific papers (total in 3 papers)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

A. N. Yablonskiiab, S. V. Morozovab, D. M. Gaponovaab, V. Ya. Aleshkinab, V. G. Shengurovb, B. N. Zvonkovb, O. V. Vikhrovab, N. V. Baidusb, Z. F. Krasil'nika

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (362 kB) Citations (3)
Abstract: We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 $\mu$m, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 $\mu$m. The results obtained are promising for integration of the structures into silicon-based optoelectronics.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 11, Pages 1435–1438
DOI: https://doi.org/10.1134/S1063782616110269
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. N. Yablonskii, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin, V. G. Shengurov, B. N. Zvonkov, O. V. Vikhrova, N. V. Baidus, Z. F. Krasil'nik, “Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1455–1458; Semiconductors, 50:11 (2016), 1435–1438
Citation in format AMSBIB
\Bibitem{YabMorGap16}
\by A.~N.~Yablonskii, S.~V.~Morozov, D.~M.~Gaponova, V.~Ya.~Aleshkin, V.~G.~Shengurov, B.~N.~Zvonkov, O.~V.~Vikhrova, N.~V.~Baidus, Z.~F.~Krasil'nik
\paper Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 11
\pages 1455--1458
\mathnet{http://mi.mathnet.ru/phts6306}
\elib{https://elibrary.ru/item.asp?id=27369030}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 11
\pages 1435--1438
\crossref{https://doi.org/10.1134/S1063782616110269}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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