|
This article is cited in 1 scientific paper (total in 1 paper)
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019
Spectra of double acceptors in layers of barriers and quantum wells of HgTe/ÑdHgTe heterostructures
D. V. Kozlovab, V. V. Rumyantsevab, S. V. Morozovab a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Abstract:
The states of double acceptors in HgTe/ÑdHgTe heterostructures containing quantum wells are theoretically investigated taking into account the substantial difference in the values of the permittivities of the barrier and quantum-well layers. The effect of such a difference and the charge induced at the heterointerfaces arising from it are described with the image-charge potential. Calculation shows a significant change in the binding energy of the acceptor centers—mercury vacancies due to the induced charge; the ionization energies of mercury vacancies are in good agreement with the position of the spectral features in the photoluminescence spectrum of the HgTe/CdHgTe heterostructures containing quantum wells.
Keywords:
heterostructures, double acceptors, defects, mercury vacancies, photoluminescence, CMT structures.
Received: 24.04.2019 Revised: 29.04.2019 Accepted: 29.04.2019
Citation:
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, “Spectra of double acceptors in layers of barriers and quantum wells of HgTe/ÑdHgTe heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1224–1228; Semiconductors, 53:9 (2019), 1198–1202
Linking options:
https://www.mathnet.ru/eng/phts5406 https://www.mathnet.ru/eng/phts/v53/i9/p1224
|
Statistics & downloads: |
Abstract page: | 35 | Full-text PDF : | 9 |
|