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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1297–1302
DOI: https://doi.org/10.21883/FTP.2019.09.48143.27 (Mi phts5421) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

Evolution of the impurity photoconductivity in CdHgTe epitaxial films with temperature

T. A. Uaman Svetikovaa, A. V. Ikonnikova, V. V. Rumyantsevb, D. V. Kozlovb, V. I. Chernichkina, A. V. Galeevaa, V. S. Varavinc, N. N. Mikhailovc, S. A. Dvoretskiic, S. V. Morozovb, V. I. Gavrilenkob

a Lomonosov Moscow State University
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (229 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2019.09.48143.27
Abstract: The photoconductivity spectra of epitaxial CdHgTe films are investigated by Fourier-transform spectroscopy at various temperatures. Features associated with both the interband absorption and ionization of impurity/defect states are found in the spectra. Their evolution with temperature is traced. The temperatures of “vanishing” of the impurity features are determined, which makes it possible to assess the acceptor concentration in the structures under study using the electroneutrality equation.
Keywords: photoconductivity, impurity, CdHgTe, Fourier-transform spectroscopy.
Funding agency Grant number
Russian Foundation for Basic Research 17-02-00898
This study was supported by the Russian Foundation for Basic Research, project no. 17-02-00898.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1266–1271
DOI: https://doi.org/10.1134/S1063782619090240
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: T. A. Uaman Svetikova, A. V. Ikonnikov, V. V. Rumyantsev, D. V. Kozlov, V. I. Chernichkin, A. V. Galeeva, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Evolution of the impurity photoconductivity in CdHgTe epitaxial films with temperature”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1297–1302; Semiconductors, 53:9 (2019), 1266–1271
Citation in format AMSBIB
\Bibitem{UamIkoRum19}
\by T.~A.~Uaman Svetikova, A.~V.~Ikonnikov, V.~V.~Rumyantsev, D.~V.~Kozlov, V.~I.~Chernichkin, A.~V.~Galeeva, V.~S.~Varavin, N.~N.~Mikhailov, S.~A.~Dvoretskii, S.~V.~Morozov, V.~I.~Gavrilenko
\paper Evolution of the impurity photoconductivity in CdHgTe epitaxial films with temperature
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1297--1302
\mathnet{http://mi.mathnet.ru/phts5421}
\crossref{https://doi.org/10.21883/FTP.2019.09.48143.27}
\elib{https://elibrary.ru/item.asp?id=41129886}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1266--1271
\crossref{https://doi.org/10.1134/S1063782619090240}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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