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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Calculation of bound and resonant levels of acceptors in narrow-gap CdHgTe solid solutions
M. S. Zholudevab, V. V. Rumyantsevba, S. V. Morozovab a Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950 Russia
b Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia
Abstract:
The wavefunctions of an electron in the field of a singly charged acceptor in narrow-gap CdHgTe solid solutions are calculated taking into account the central-cell potential. By approximating the calculation results, an analytical expression is obtained for the energies of the deepest bound and resonant states at various parameters of the central-cell potential and the cadmium content in the solid solution. The dependences obtained can be used to identify acceptor impurities in CdHgTe, in particular, arsenic, as the most promising dopant for $p$-type structures.
Received: 12.07.2022 Revised: 12.07.2022 Accepted: 24.07.2022
Citation:
M. S. Zholudev, V. V. Rumyantsev, S. V. Morozov, “Calculation of bound and resonant levels of acceptors in narrow-gap CdHgTe solid solutions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:5 (2022), 307–312; JETP Letters, 116:5 (2022), 313–318
Linking options:
https://www.mathnet.ru/eng/jetpl6748 https://www.mathnet.ru/eng/jetpl/v116/i5/p307
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Abstract page: | 66 | References: | 18 | First page: | 15 |
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