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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 111, Issue 10, Pages 682–688
DOI: https://doi.org/10.31857/S1234567820100067 (Mi jetpl6174) 		 
This article is cited in 5 scientific papers (total in 5 papers)

CONDENSED MATTER

Probing states of a double acceptor in ÑdHgTe heterostructures via optical gating

I. D. Nikolaeva, T. A. Uaman Svetikovaa, V. V. Rumyantsevb, M. S. Zholudevb, D. V. Kozlovb, S. V. Morozovb, S. A. Dvoretskyc, N. N. Mikhailovc, V. I. Gavrilenkob, A. V. Ikonnikova

a Faculty of Physics, Moscow State University, Moscow, 119991 Russia
b Institute for Physics of Microstructures, Branch of the Federal Research Center Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia
c Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
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DOI: https://doi.org/10.31857/S1234567820100067
Abstract: Photoconductivity spectra in a HgTe/CdHgTe double quantum well with a normal band structure have been studied. Photosensitivity bands associated with the ionization of a mercury vacancy, which is a doubly charged acceptor, have been detected in photoconductivity spectra. The transformation of photoconductivity spectra when the Fermi level moves from the edge of the valence band through the band gap to the conduction band has been revealed using the residual photoconductivity effect. It has been shown that the observed absorption bands are due to the ionization of doubly charged acceptors rather than individual different singly charged states.
Funding agency Grant number
Russian Science Foundation 19-72-00128
Ministry of Education and Science of the Russian Federation ÌÊ-1430.2020.2
This work was supported by the Russian Science Foundation (project no. 19-72-00128). The measurements of the magnetoresistance were supported by the Council of the President of the Russian Federation for State Support of Young Scientists and Leading Scientific Schools (project no. MK-1430.2020.2).
Received: 10.04.2020
Revised: 16.04.2020
Accepted: 16.04.2020
English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 111, Issue 10, Pages 575–581
DOI: https://doi.org/10.1134/S0021364020100124
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. D. Nikolaev, T. A. Uaman Svetikova, V. V. Rumyantsev, M. S. Zholudev, D. V. Kozlov, S. V. Morozov, S. A. Dvoretsky, N. N. Mikhailov, V. I. Gavrilenko, A. V. Ikonnikov, “Probing states of a double acceptor in ÑdHgTe heterostructures via optical gating”, Pis'ma v Zh. Èksper. Teoret. Fiz., 111:10 (2020), 682–688; JETP Letters, 111:10 (2020), 575–581
Citation in format AMSBIB
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