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This article is cited in 4 scientific papers (total in 4 papers)
Electronic properties of semiconductors
Calculation of wave functions of resonant acceptor states in narrow-gap CdHgTe compounds
M. S. Zholudevab, D. V. Kozlovab, N. S. Kulikovab, A. A. Razovaab, V. I. Gavrilenkoab, S. V. Morozovab a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Abstract:
Electron wave functions in the conduction band of zero-gap HgCdTe alloy are calculated in the Coulomb acceptor field. The resonant-state energies are determined.
Keywords:
impurity, resonant states, cadmium, mercury–tellurium, wave function.
Received: 06.04.2020 Revised: 12.04.2020 Accepted: 12.04.2020
Citation:
M. S. Zholudev, D. V. Kozlov, N. S. Kulikov, A. A. Razova, V. I. Gavrilenko, S. V. Morozov, “Calculation of wave functions of resonant acceptor states in narrow-gap CdHgTe compounds”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 695–699; Semiconductors, 54:8 (2020), 827–831
Linking options:
https://www.mathnet.ru/eng/phts5183 https://www.mathnet.ru/eng/phts/v54/i8/p695
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