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This article is cited in 4 scientific papers (total in 4 papers)
XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018
Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers
D. V. Kozlovab, V. V. Rumyantsevab, S. V. Morozovba, A. M. Kadykova, M. A. Fadeeva, H.-W. Hübersc, V. I. Gavrilenkoab a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Institut für Physik, Humboldt-Universität zu Berlin, Berlin, Germany
Abstract:
A method for calculating the states of multivalent donors and acceptors in Hg$_{1-x}$Cd$_{x}$Te materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg$_{1-x}$Cd$_{x}$Te films.
Keywords:
Multiply Charged States, Crystalline Structure Defects, Ionization Energy, Mercury Vacancies, Acceptor Centers.
Received: 25.04.2018 Accepted: 07.05.2018
Citation:
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, H.-W. Hübers, V. I. Gavrilenko, “Calculation of multiply charged states of impurity-defect centers in epitaxial Hg$_{1-x}$Cd$_{x}$Te layers”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1257–1262; Semiconductors, 52:11 (2018), 1369–1374
Linking options:
https://www.mathnet.ru/eng/phts5676 https://www.mathnet.ru/eng/phts/v52/i11/p1257
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