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This article is cited in 6 scientific papers (total in 6 papers)
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission
V. V. Rumyantsevab, A. M. Kadykova, M. A. Fadeeva, A. A. Dubinovab, V. V. Utochkinab, N. N. Mikhailovcd, S. A. Dvoretskiic, S. V. Morozovba, V. I. Gavrilenkoba a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
d Novosibirsk State University
Abstract:
The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 $\mu$m, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 $\mu$m at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 $\mu$m with a threshold pump intensity in the range of 100–500 W/cm$^2$ at 20 K.
Received: 05.06.2017 Accepted: 15.06.2017
Citation:
V. V. Rumyantsev, A. M. Kadykov, M. A. Fadeev, A. A. Dubinov, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1616–1620; Semiconductors, 51:12 (2017), 1557–1561
Linking options:
https://www.mathnet.ru/eng/phts5963 https://www.mathnet.ru/eng/phts/v51/i12/p1616
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