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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1263–1267
DOI: https://doi.org/10.21883/FTP.2018.11.46580.02 (Mi phts5677) 		 
This article is cited in 7 scientific papers (total in 7 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Effect of features of the band spectrum on the characteristics of stimulated emission in narrow-gap heterostructures with HgCdTe quantum wells

V. V. Rumyantsevab, N. S. Kulikovab, A. M. Kadykova, M. A. Fadeeva, A. V. Ikonnikovc, A. S. Kazakovc, M. S. Zholudeva, V. Ya. Aleshkinab, V. V. Utochkinab, N. N. Mikhailovde, S. A. Dvoretskiid, S. V. Morozovab, V. I. Gavrilenkoab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Lomonosov Moscow State University
d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
e Novosibirsk State University
Full-text PDF (254 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2018.11.46580.02
Abstract: We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 $\mu$m on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 $\mu$m, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.
Keywords: Stimulated Emission (SE), Quantum Wells (QWs), Quantum Cascade Lasers, Structure Growth Axis, Shockley Read Hall Recombination Centers.
Funding agency Grant number
Russian Foundation for Basic Research 16-32-60172
Ministry of Education and Science of the Russian Federation 0035-2014-0201
МК-4399.2018.2
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1375–1379
DOI: https://doi.org/10.1134/S1063782618110234
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Rumyantsev, N. S. Kulikov, A. M. Kadykov, M. A. Fadeev, A. V. Ikonnikov, A. S. Kazakov, M. S. Zholudev, V. Ya. Aleshkin, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko, “Effect of features of the band spectrum on the characteristics of stimulated emission in narrow-gap heterostructures with HgCdTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1263–1267; Semiconductors, 52:11 (2018), 1375–1379
Citation in format AMSBIB
\Bibitem{RumKulKad18}
\by V.~V.~Rumyantsev, N.~S.~Kulikov, A.~M.~Kadykov, M.~A.~Fadeev, A.~V.~Ikonnikov, A.~S.~Kazakov, M.~S.~Zholudev, V.~Ya.~Aleshkin, V.~V.~Utochkin, N.~N.~Mikhailov, S.~A.~Dvoretskii, S.~V.~Morozov, V.~I.~Gavrilenko
\paper Effect of features of the band spectrum on the characteristics of stimulated emission in narrow-gap heterostructures with HgCdTe quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1263--1267
\mathnet{http://mi.mathnet.ru/phts5677}
\crossref{https://doi.org/10.21883/FTP.2018.11.46580.02}
\elib{https://elibrary.ru/item.asp?id=36903595}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1375--1379
\crossref{https://doi.org/10.1134/S1063782618110234}
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