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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9, Pages 929–932
DOI: https://doi.org/10.21883/FTP.2020.09.49834.26 (Mi phts5173) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region

V. V. Utochkinab, M. A. Fadeeva, S. S. Krishtopenkoc, V. V. Rumyantsevab, V. Ya. Aleshkinab, A. A. Dubinovab, S. V. Morozovab, B. R. Semyagind, M. A. Putyatod, E. A. Emelyanovd, V. V. Preobrazhenskiid, V. I. Gavrilenkoab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Laboratoire Charles Coulimb, CNRS & Universite Montpellier, 34095 Montpellier, France
d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (166 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.09.49834.26
Abstract: The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure.
Keywords: quantum well, InAs/GaInSb, photoluminescence, waveguide heterostructure.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0035-2019-0020
Russian Foundation for Basic Research 18-42-520040_поволжье
The study was implemented in accordance with government order no. 0035-2019-0020 for the Institute for Physics of Microstructures, Russian Academy of Sciences, and supported by the Russian Foundation for Basic Research, project no. 18-42-520040_povolzh’e).
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 9, Pages 1119–1122
DOI: https://doi.org/10.1134/S1063782620090304
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Utochkin, M. A. Fadeev, S. S. Krishtopenko, V. V. Rumyantsev, V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 929–932; Semiconductors, 54:9 (2020), 1119–1122
Citation in format AMSBIB
\Bibitem{UtoFadKri20}
\by V.~V.~Utochkin, M.~A.~Fadeev, S.~S.~Krishtopenko, V.~V.~Rumyantsev, V.~Ya.~Aleshkin, A.~A.~Dubinov, S.~V.~Morozov, B.~R.~Semyagin, M.~A.~Putyato, E.~A.~Emelyanov, V.~V.~Preobrazhenskii, V.~I.~Gavrilenko
\paper Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 9
\pages 929--932
\mathnet{http://mi.mathnet.ru/phts5173}
\crossref{https://doi.org/10.21883/FTP.2020.09.49834.26}
\elib{https://elibrary.ru/item.asp?id=44154201}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 9
\pages 1119--1122
\crossref{https://doi.org/10.1134/S1063782620090304}
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    Citing articles in Google Scholar: Russian citations, English citations
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