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This article is cited in 2 scientific papers (total in 2 papers)
Electronic properties of semiconductors
Calculation of Coulomb acceptor resonant states in zero-gap semiconductors
M. S. Zholudevab, V. V. Rumyantsevab, S. V. Morozovab a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
b Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
Abstract:
Wavefunctions of electron have been calculated for conduction band of zero-gap semiconductor with Coulomb acceptor. Spherically symmetric Luttinger model was used. The resonant state energies have been calculated as functions of electron and hole mass ratio.
Keywords:
gapless semiconductor, impurity, resonant states, scattering matrix.
Received: 22.12.2020 Revised: 30.12.2020 Accepted: 30.12.2020
Citation:
M. S. Zholudev, V. V. Rumyantsev, S. V. Morozov, “Calculation of Coulomb acceptor resonant states in zero-gap semiconductors”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 391–396; Semiconductors, 55:6 (2021), 537–541
Linking options:
https://www.mathnet.ru/eng/phts5032 https://www.mathnet.ru/eng/phts/v55/i5/p391
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