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This article is cited in 1 scientific paper (total in 1 paper)
Express characterization of the HgCdTe/CdHgTe quantum well waveguide heterostructures with the quasi-relativistic carrier dispersion law by room-temperature photoluminescence spectroscopy
S. V. Morozovab, V. V. Utochkina, V. V. Rumyantseva, M. A. Fadeeva, A. A. Razovaa, V. Ya. Aleshkina, V. I. Gavrilenkoa, N. N. Mikhailovc, S. A. Dvoretskiic a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
An express technique for characterizing narrow-gap waveguide heterostructures with the HgCdTe/CdHgTe quantum wells is proposed, which is based on an analysis of their room-temperature luminescence response. Advantages and constraints of this characterization technique are discussed in comparison with methods for more detailed diagnostics that entail photoluminescence and photoconductivity measurements in a wide temperature range.
Keywords:
HgCdTe, quantum wells, photoluminescence, stimulated emission.
Received: 28.10.2020 Revised: 30.10.2020 Accepted: 30.10.2020
Citation:
S. V. Morozov, V. V. Utochkin, V. V. Rumyantsev, M. A. Fadeev, A. A. Razova, V. Ya. Aleshkin, V. I. Gavrilenko, N. N. Mikhailov, S. A. Dvoretskii, “Express characterization of the HgCdTe/CdHgTe quantum well waveguide heterostructures with the quasi-relativistic carrier dispersion law by room-temperature photoluminescence spectroscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021), 51–54; Tech. Phys. Lett., 47:2 (2021), 154–157
Linking options:
https://www.mathnet.ru/eng/pjtf4876 https://www.mathnet.ru/eng/pjtf/v47/i3/p51
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