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This article is cited in 4 scientific papers (total in 4 papers)
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019
Study of the auger recombination energy threshold in a series of waveguide heterostructures with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te QWs near 14 $\mu$m
V. V. Utochkina, V. Ya. Aleshkina, A. A. Dubinova, V. I. Gavrilenkoa, N. S. Kulikova, M. A. Fadeeva, V. V. Rumyantseva, N. N. Mikhailovb, S. A. Dvoretskiib, S. V. Morozova a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
Stimulated emission from a heterostructure with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te quantum wells, placed in a waveguide layer of wide-gap CdHgTe, is obtained at wavelengths of 14–11 $\mu$m and a temperatures of 18–80 K. The threshold Auger recombination energy is calculated for a set of heterostructures with quantum wells of pure HgTe with a band gap of 90 meV (wavelength 14 $\mu$m). The possibility of fabricating lasers operating at 14 $\mu$m and working temperatures higher than that of liquid nitrogen is demonstrated.
Keywords:
threshold energy, Auger recombination, HgCdTe.
Received: 24.04.2019 Revised: 29.04.2019 Accepted: 29.04.2019
Citation:
V. V. Utochkin, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, N. S. Kulikov, M. A. Fadeev, V. V. Rumyantsev, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, “Study of the auger recombination energy threshold in a series of waveguide heterostructures with HgTe/Cd$_{0.7}$Hg$_{0.3}$Te QWs near 14 $\mu$m”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1178–1181; Semiconductors, 53:9 (2019), 1154–1157
Linking options:
https://www.mathnet.ru/eng/phts5398 https://www.mathnet.ru/eng/phts/v53/i9/p1178
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