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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 9, Pages 1100–1103
DOI: https://doi.org/10.21883/FTP.2018.09.46159.8833 (Mi phts5745) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor physics

Lowering the lasing threshold by doping in mid-infrared lasers based on HgCdTe with HgTe quantum wells

A. A. Dubinovab, V. Ya. Aleshkinab, S. V. Morozovab

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
Full-text PDF (113 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2018.09.46159.8833
Abstract: The possibility of significant lowering of the interband lasing threshold in laser structures of the mid-infrared region based on HgCdTe with HgTe quantum wells by doping with donors, which introduce $\delta$ layers near quantum wells, is proposed and analyzed. It is shown that at an optimum surface donor concentration in the $\delta$ layer of 4 $\times$ 10$^{10}$ cm$^{-2}$ and an operating temperature of $>$ 40 K, the lasing threshold at a wavelength of 20 $\mu$m can be lowered more than twofold.
Keywords: HgTe QWs, HgTe Quantum, Quantum Wells (QW), Quantum Cascade Lasers (QCLs), Threshold Current Density.
Funding agency Grant number
Russian Science Foundation 17-12-01360
Received: 30.01.2018
Accepted: 20.02.2018
English version:
Semiconductors, 2018, Volume 52, Issue 9, Pages 1221–1224
DOI: https://doi.org/10.1134/S1063782618090038
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Dubinov, V. Ya. Aleshkin, S. V. Morozov, “Lowering the lasing threshold by doping in mid-infrared lasers based on HgCdTe with HgTe quantum wells”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1100–1103; Semiconductors, 52:9 (2018), 1221–1224
Citation in format AMSBIB
\Bibitem{DubAleMor18}
\by A.~A.~Dubinov, V.~Ya.~Aleshkin, S.~V.~Morozov
\paper Lowering the lasing threshold by doping in mid-infrared lasers based on HgCdTe with HgTe quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 9
\pages 1100--1103
\mathnet{http://mi.mathnet.ru/phts5745}
\crossref{https://doi.org/10.21883/FTP.2018.09.46159.8833}
\elib{https://elibrary.ru/item.asp?id=36903558}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 9
\pages 1221--1224
\crossref{https://doi.org/10.1134/S1063782618090038}
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  • https://www.mathnet.ru/eng/phts/v52/i9/p1100
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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