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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 21, Pages 48–50
DOI: https://doi.org/10.21883/PJTF.2019.21.48475.17975 (Mi pjtf5283) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate

R. R. Reznika, K. P. Kotlyarb, N. V. Kryzhanovskayab, S. V. Morozovcd, G. E. Cirlinabefg

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
d National Research Lobachevsky State University of Nizhny Novgorod
e Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
f Peter the Great St. Petersburg Polytechnic University
g Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (407 kB) Citations (5)
DOI: https://doi.org/10.21883/PJTF.2019.21.48475.17975
Abstract: The principal possibility of synthesis of InGaN nanostructures of branched morphology (“nanoflowers”) by molecular beam epitaxy on the surface of a silicon substrate has been demonstrated. The results of morphological studies have shown that the development of the morphology of InGaN nanostructures occurs in several stages even when maintaining a constant substrate temperature. The grown structures exhibit a photoluminescence line in a wide wavelength range from 450 to 950 nm at room temperature.
Keywords: nitride nanostructures, silicon, molecular beam epitaxy, semiconductors, optoelectronics.
Funding agency Grant number
Russian Science Foundation 19-72-30010
Ministry of Education and Science of the Russian Federation 16.2483.2017/4.6
Russian Foundation for Basic Research 16-29-03037-офи
The work was supported by the Russian Scientific Foundation, project no. 19-72-30010. The synthesis of samples was carried out with the financial support of the Ministry of Science and Higher Education of the Russian Federation within the framework of state assignment no. 16.2483.2017/4.6. The studies of the optical properties of synthesized samples were carried out with the support of the Russian Foundation for Basic Research, project no. 16-29-03037-ofi.
Received: 11.07.2019
Revised: 18.07.2019
Accepted: 18.07.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 11, Pages 1111–1113
DOI: https://doi.org/10.1134/S1063785019110129
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. R. Reznik, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 48–50; Tech. Phys. Lett., 45:11 (2019), 1111–1113
Citation in format AMSBIB
\Bibitem{RezKotKry19}
\by R.~R.~Reznik, K.~P.~Kotlyar, N.~V.~Kryzhanovskaya, S.~V.~Morozov, G.~E.~Cirlin
\paper Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 21
\pages 48--50
\mathnet{http://mi.mathnet.ru/pjtf5283}
\crossref{https://doi.org/10.21883/PJTF.2019.21.48475.17975}
\elib{https://elibrary.ru/item.asp?id=41848470}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 11
\pages 1111--1113
\crossref{https://doi.org/10.1134/S1063785019110129}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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