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This article is cited in 10 scientific papers (total in 10 papers)
XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017
On the band spectrum in $p$-type HgTe/CdHgTe heterostructures and its transformation under temperature variation
A. V. Ikonnikovab, L. S. Bovkunac, V. V. Rumyantsevab, S. S. Krishtopenkoad, V. Ya. Aleshkinab, A. M. Kadykovad, M. Orlitac, M. Potemskic, V. I. Gavrilenkoab, S. V. Morozovba, S. A. Dvoretskiie, N. N. Mikhailovfe a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, Grenoble, France
d Laboratoire Charles Coulomb UMR 5221, Montpellier, France
e Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
f Novosibirsk State University
Abstract:
The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting $p$-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.
Received: 27.04.2017 Accepted: 12.05.2017
Citation:
A. V. Ikonnikov, L. S. Bovkun, V. V. Rumyantsev, S. S. Krishtopenko, V. Ya. Aleshkin, A. M. Kadykov, M. Orlita, M. Potemski, V. I. Gavrilenko, S. V. Morozov, S. A. Dvoretskii, N. N. Mikhailov, “On the band spectrum in $p$-type HgTe/CdHgTe heterostructures and its transformation under temperature variation”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1588–1593; Semiconductors, 51:12 (2017), 1531–1536
Linking options:
https://www.mathnet.ru/eng/phts5957 https://www.mathnet.ru/eng/phts/v51/i12/p1588
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