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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, M. N. Drozdov, D. A. Zdoroveishchev, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Kudrin, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, “Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer”, Fizika Tverdogo Tela, 63:9 (2021), 1245–1252   ; Phys. Solid State, 63:11 (2021), 1593–1600 |
| 2. |
V. P. Lesnikov, M. V. Ved, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, I. L. Kalentyeva, A. V. Kudrin, R. N. Kriukov, “Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type”, Fizika Tverdogo Tela, 63:7 (2021), 866–873 ; Phys. Solid State, 63:7 (2021), 1028–1035 |
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| 3. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer”, Fizika Tverdogo Tela, 63:3 (2021), 346–355 ; Phys. Solid State, 63:3 (2021), 425–434 |
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| 4. |
M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Kudrin, O. V. Vikhrova, I. V. Samartsev, S. M. Nekorkin, “Methods for switching radiation polarization in GaAs laser diodes”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1409–1414 ; Tech. Phys., 66:11 (2021), 1194–1199  |
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2020 |
| 5. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, A. V. Zdoroveyshchev, E. A. Larionova, V. A. Koval'skii, O. A. Soltanovich, “Diode heterostructures with a ferromagnetic (Ga, Mn)As layer”, Fizika Tverdogo Tela, 62:3 (2020), 373–380 ; Phys. Solid State, 62:3 (2020), 423–430 |
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| 6. |
A. V. Alaferdov, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, S. A. Moshkalev, “The use of films of multilayer graphene as coatings of light-emitting GaAs structures”, Optics and Spectroscopy, 128:3 (2020), 399–406 ; Optics and Spectroscopy, 128:3 (2020), 387–394 |
| 7. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Pulsed laser irradiation of GaAs-based light-emitting structures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1336–1343 ; Semiconductors, 54:12 (2020), 1598–1604 |
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| 8. |
Yu. A. Danilov, M. V. Ved, O. V. Vikhrova, N. V. Dikareva, M. N. Drozdov, B. N. Zvonkov, V. A. Koval'skii, R. N. Kriukov, A. V. Kudrin, V. P. Lesnikov, P. A. Yunin, A. M. Andreev, “Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 868–872 ; Semiconductors, 54:9 (2020), 1059–1063 |
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| 9. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, P. B. Demina, M. N. Drozdov, A. V. Zdoroveyshchev, R. N. Kriukov, A. V. Nezhdanov, I. N. Antonov, S. M. Plankina, M. P. Temiryazeva, “Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 801–806 ; Semiconductors, 54:8 (2020), 956–960 |
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2019 |
| 10. |
E. A. Gan'shina, L. L. Golik, Z. E. Kun'kova, G. S. Zykov, Yu. V. Markin, Yu. A. Danilov, B. N. Zvonkov, “Phase separation in (Ga,Mn)As layers obtained by ion implantation and subsequent laser annealing”, Fizika Tverdogo Tela, 61:3 (2019), 465–471 ; Phys. Solid State, 61:3 (2019), 332–338 |
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| 11. |
N. V. Dikareva, B. N. Zvonkov, I. V. Samartsev, S. M. Nekorkin, N. V. Baidus, A. A. Dubinov, “GaAs-based laser diode with InGaAs waveguide quantum wells”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1718–1720 ; Semiconductors, 53:12 (2019), 1709–1711 |
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| 12. |
S. M. Plankina, O. V. Vikhrova, B. N. Zvonkov, S. Yu. Zubkov, R. N. Kriukov, A. V. Nezhdanov, D. A. Pavlov, I. Yu. Pashen'kin, A. A. Sushkov, “On the combined application of raman spectroscopy and photoluminescence spectroscopy for the diagnostics of multilayer heterostructures”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1233–1236 ; Semiconductors, 53:9 (2019), 1207–1210 |
| 13. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, A. V. Kudrin, I. L. Kalentyeva, E. A. Larionova, V. A. Koval'skii, O. A. Soltanovich, “Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 351–358 ; Semiconductors, 53:3 (2019), 332–338 |
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| 14. |
M. V. Dorokhin, P. B. Demina, A. V. Budanov, Yu. N. Vlasov, G. I. Kotov, A. V. Zdoroveyshchev, V. N. Trushin, B. N. Zvonkov, “Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 52–55 ; Tech. Phys. Lett., 45:3 (2019), 235–238 |
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2018 |
| 15. |
Z. E. Kun'kova, E. A. Gan'shina, L. L. Golik, Yu. A. Danilov, A. V. Kudrin, V. I. Kovalev, G. S. Zykov, Yu. V. Markin, O. V. Vikhrova, B. N. Zvonkov, “Phase separation in GaMnAs layers grown by laser pulsed deposition”, Fizika Tverdogo Tela, 60:5 (2018), 940–946 ; Phys. Solid State, 60:5 (2018), 943–949 |
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| 16. |
I. V. Samartsev, S. M. Nekorkin, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, I. Yu. Pashen'kin, N. V. Dikareva, A. B. Chigineva, “Photodetectors with an InGaP active region and InGaP metamorphic buffer layer grown on GaAs substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1460–1463 ; Semiconductors, 52:12 (2018), 1564–1567 |
| 17. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, I. N. Antonov, “The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1286–1290 ; Semiconductors, 52:11 (2018), 1398–1402 |
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| 18. |
G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, “Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 873–880 ; Semiconductors, 52:8 (2018), 1004–1011 |
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| 19. |
V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74 ; Tech. Phys. Lett., 44:8 (2018), 735–738 |
| 20. |
A. A. Afonenko, D. V. Ushakov, V. Ya. Aleshkin, A. A. Dubinov, N. V. Dikareva, S. M. Nekorkin, B. N. Zvonkov, “Power characteristics of lasers with quantum-well waveguides and blocking layers”, Kvantovaya Elektronika, 48:4 (2018), 390–394 [Quantum Electron., 48:4 (2018), 390–394  ] |
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2017 |
| 21. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, “Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer”, Fizika Tverdogo Tela, 59:11 (2017), 2196–2199 ; Phys. Solid State, 59:11 (2017), 2216–2219 |
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| 22. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, V. P. Lesnikov, A. V. Nezhdanov, S. A. Pavlov, A. E. Parafin, I. Yu. Pashen'kin, S. M. Plankina, “Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing”, Fizika Tverdogo Tela, 59:11 (2017), 2130–2134 ; Phys. Solid State, 59:11 (2017), 2150–2154 |
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| 23. |
S. M. Plankina, O. V. Vikhrova, B. N. Zvonkov, A. V. Nezhdanov, I. Yu. Pashen'kin, “Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1510–1513 ; Semiconductors, 51:11 (2017), 1456–1459 |
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| 24. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, M. V. Dorokhin, D. A. Pavlov, I. N. Antonov, M. N. Drozdov, Yu. V. Usov, “Features of the selective manganese doping of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1468–1472 ; Semiconductors, 51:11 (2017), 1415–1419 |
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| 25. |
B. N. Zvonkov, N. V. Baidus, S. M. Nekorkin, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, V. E. Kotomina, “Optical thyristor based on GaAs/InGaP materials”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1443–1446 ; Semiconductors, 51:11 (2017), 1391–1394 |
| 26. |
N. V. Dikareva, B. N. Zvonkov, O. V. Vikhrova, S. M. Nekorkin, V. Ya. Aleshkin, A. A. Dubinov, “Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well”, Fizika i Tekhnika Poluprovodnikov, 51:10 (2017), 1410–1413 ; Semiconductors, 51:10 (2017), 1360–1363 |
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| 27. |
S. M. Nekorkin, B. N. Zvonkov, N. V. Baidus, N. V. Dikareva, O. V. Vikhrova, A. A. Afonenko, D. V. Ushakov, “Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 75–78 ; Semiconductors, 51:1 (2017), 73–77 |
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2016 |
| 28. |
N. V. Baidus, V. A. Kukushkin, B. N. Zvonkov, S. M. Nekorkin, “Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1576–1582 ; Semiconductors, 50:11 (2016), 1554–1560 |
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| 29. |
S. M. Plankina, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, N. Yu. Konnova, A. V. Nezhdanov, I. Yu. Pashen'kin, “Study of the structures of cleaved cross sections by Raman spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1561–1564 ; Semiconductors, 50:11 (2016), 1539–1542 |
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| 30. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, M. N. Drozdov, “Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1490–1496 ; Semiconductors, 50:11 (2016), 1469–1474 |
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| 31. |
M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, P. B. Demina, Yu. V. Usov, D. E. Nikolichev, R. N. Kriukov, S. Yu. Zubkov, “Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1463–1468 ; Semiconductors, 50:11 (2016), 1443–1448 |
| 32. |
A. N. Yablonskii, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin, V. G. Shengurov, B. N. Zvonkov, O. V. Vikhrova, N. V. Baidus, Z. F. Krasil'nik, “Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1455–1458 ; Semiconductors, 50:11 (2016), 1435–1438 |
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| 33. |
V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, P. A. Yunin, M. N. Drozdov, O. V. Vikhrova, S. M. Nekorkin, B. N. Zvonkov, “Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 596–599 ; Semiconductors, 50:5 (2016), 586–589 |
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2015 |
| 34. |
N. V. Dikareva, S. M. Nekorkin, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, “Nonlinear harmonic mixing in an InGaAs/InGaP/GaAs laser on a germanium substrate”, Kvantovaya Elektronika, 45:3 (2015), 204–206 [Quantum Electron., 45:3 (2015), 204–206 ] |
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2014 |
| 35. |
N. V. Dikareva, S. M. Nekorkin, M. V. Karzanova, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, A. A. Afonenko, “Substrate-emitting semiconductor laser with a trapezoidal active region”, Kvantovaya Elektronika, 44:4 (2014), 286–288 [Quantum Electron., 44:4 (2014), 286–288 ] |
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2013 |
| 36. |
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, M. V. Karzanova, K. E. Kudryavtsev, S. M. Nekorkin, A. N. Yablonskii, “Guiding effect of quantum wells in semiconductor lasers”, Kvantovaya Elektronika, 43:5 (2013), 401–406 [Quantum Electron., 43:5 (2013), 401–406 ] |
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2012 |
| 37. |
S. M. Nekorkin, B. N. Zvonkov, M. V. Karzanova, N. V. Dikareva, V. Ya. Aleshkin, A. A. Dubinov, “Mode structure in the far field radiation of a leaky-wave multiple quantum well laser”, Kvantovaya Elektronika, 42:10 (2012), 931–933 [Quantum Electron., 42:10 (2012), 931–933 ] |
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2010 |
| 38. |
S. I. Dorozhkin, M. O. Skvortsova, A. V. Kudrin, B. N. Zvonkov, Yu. A. Danilov, O. V. Vikhrova, “Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:6 (2010), 312–317 ; JETP Letters, 91:6 (2010), 292–296 |
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| 39. |
V. Ya. Aleshkin, T. S. Babushkina, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, V. I. Nekorkin, “Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern”, Kvantovaya Elektronika, 40:10 (2010), 855–857 [Quantum Electron., 40:10 (2010), 855–857 ] |
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2009 |
| 40. |
S. V. Zaitsev, M. V. Dorokhin, A. S. Brichkin, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, V. D. Kulakovskii, “Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009), 730–735 ; JETP Letters, 90:10 (2009), 658–662 |
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2008 |
| 41. |
V. Ya. Aleshkin, A. V. Antonov, V. I. Gavrilenko, B. N. Zvonkov, D. V. Kozlov, “Impurity photoconductivity in strained <i>p</i> -InGaAs/GaAsP heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:3 (2008), 229–233 ; JETP Letters, 88:3 (2008), 197–200 |
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| 42. |
B. A. Aronzon, A. S. Lagutin, V. V. Ryl'kov, V. V. Tugushev, V. N. Men'shov, A. V. Lashkul, R. Laiho, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, “Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008), 192–198 ; JETP Letters, 87:3 (2008), 164–169 |
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2007 |
| 43. |
B. A. Aronzon, V. A. Kul'bachinskii, P. V. Gurin, A. B. Davydov, V. V. Ryl'kov, A. B. Granovskii, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, Y. Horikoshi, K. Onomitsu, “Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007), 32–39 ; JETP Letters, 85:1 (2007), 27–33 |
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2001 |
| 44. |
B. N. Zvonkov, K. E. Zinov'ev, J. Kh. Nurligareev, I. F. Salakhutdinov, V. V. Svetikov, V. A. Sychugov, “Tunable wide-aperture semiconductor laser with an external waveguide – grating mirror”, Kvantovaya Elektronika, 31:1 (2001), 35–38 [Quantum Electron., 31:1 (2001), 35–38 ] |
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1999 |
| 45. |
N. B. Zvonkov, S. A. Akhlestina, A. V. Ershov, B. N. Zvonkov, G. A. Maksimov, E. A. Uskova, “Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm”, Kvantovaya Elektronika, 26:3 (1999), 217–218 [Quantum Electron., 29:3 (1999), 217–218 ] |
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1998 |
| 46. |
N. B. Zvonkov, B. N. Zvonkov, A. V. Ershov, E. A. Uskova, G. A. Maksimov, “Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate”, Kvantovaya Elektronika, 25:7 (1998), 622–624 [Quantum Electron., 28:7 (1998), 605–607 ] |
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1997 |
| 47. |
I. A. Avrutskiĭ, E. M. Dianov, B. N. Zvonkov, N. B. Zvonkov, I. G. Malkina, G. A. Maksimov, E. A. Uskova, “Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm”, Kvantovaya Elektronika, 24:2 (1997), 123–126 [Quantum Electron., 27:2 (1997), 118–121 ] |
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1994 |
| 48. |
I. A. Avrutskiĭ, L. M. Batukova, E. M. Dianov, B. N. Zvonkov, N. B. Zvonkov, G. A. Maksimov, I. G. Malkina, L. V. Medvedeva, T. N. Yan'kova, “Lasers emitting at a wavelength of 0.98 μm, constructed from InGaP/GaAs heterostructures grown by MOCVD method”, Kvantovaya Elektronika, 21:10 (1994), 921–924 [Quantum Electron., 24:10 (1994), 859–862 ] |
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