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This article is cited in 3 scientific papers (total in 3 papers)
Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor
M. V. Dorokhina, P. B. Deminaa, A. V. Budanovb, Yu. N. Vlasovb, G. I. Kotovb, A. V. Zdoroveyshcheva, V. N. Trushina, B. N. Zvonkova a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Voronezh State University of Engineering Technologies
Abstract:
Spin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the deposition of a CoPt contact provides an opportunity to enhance the circular polarization degree of diode emission. The observed increase in the polarization degree is attributed to the suppression of spin relaxation at the metal/semiconductor interface due to surface passivation and a reduction in the density of surface electron states as a result of processing in selenium vapor.
Received: 14.11.2018 Revised: 13.12.2018 Accepted: 13.12.2018
Citation:
M. V. Dorokhin, P. B. Demina, A. V. Budanov, Yu. N. Vlasov, G. I. Kotov, A. V. Zdoroveyshchev, V. N. Trushin, B. N. Zvonkov, “Enhancing the circular polarization of spin light-emitting diodes by processing in selenium vapor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 52–55; Tech. Phys. Lett., 45:3 (2019), 235–238
Linking options:
https://www.mathnet.ru/eng/pjtf5519 https://www.mathnet.ru/eng/pjtf/v45/i5/p52
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Abstract page: | 51 | Full-text PDF : | 25 |
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