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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1561–1564
(Mi phts6325)
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This article is cited in 5 scientific papers (total in 5 papers)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Study of the structures of cleaved cross sections by Raman spectroscopy
S. M. Plankinaa, O. V. Vikhrovab, Yu. A. Danilova, B. N. Zvonkovb, N. Yu. Konnovaa, A. V. Nezhdanova, I. Yu. Pashen'kina a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
Scanning confocal Raman spectroscopy is used to study the crystal structure of GaAs irradiated with Mn$^+$ ions with subsequent pulse laser annealing. The scanning of cleaved cross sections of samples shows that the structure completely recovers over the depth of implantation after the annealing. Scattering in the coupled phonon–plasmon mode is revealed, which is indicative of electrical activation of the impurity at Mn doses above 1 $\times$ 10$^{16}$ cm$^{-2}$. The study shows the possibilities of using scanning confocal Raman spectroscopy in investigations of cleaved cross sections of structures. Using a test structure with a single $\delta$-doped C layer, we show that the lateral resolution of the technique is 300 nm.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
S. M. Plankina, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, N. Yu. Konnova, A. V. Nezhdanov, I. Yu. Pashen'kin, “Study of the structures of cleaved cross sections by Raman spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1561–1564; Semiconductors, 50:11 (2016), 1539–1542
Linking options:
https://www.mathnet.ru/eng/phts6325 https://www.mathnet.ru/eng/phts/v50/i11/p1561
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