Study of the structures of cleaved cross sections by Raman spectroscopy

Scanning confocal Raman spectroscopy is used to study the crystal structure of GaAs irradiated with Mn$^+$ ions with subsequent pulse laser annealing. The scanning of cleaved cross sections of samples shows that the structure completely recovers over the depth of implantation after the annealing. Scattering in the coupled phonon–plasmon mode is revealed, which is indicative of electrical activation of the impurity at Mn doses above 1 $\times$ 10$^{16}$ cm$^{-2}$. The study shows the possibilities of using scanning confocal Raman spectroscopy in investigations of cleaved cross sections of structures. Using a test structure with a single $\delta$-doped C layer, we show that the lateral resolution of the technique is 300 nm.