Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate

A semiconductor laser based on a new design of the InGaAs/GaAs/InGaP structure was developed and investigated experimentally. The radiation from this laser was coupled out through the substrate, which ensured a narrow angular distribution in a plane perpendicular to the p – n junction. An output power of 0.63 W in a beam with the radiation divergence of 1.2° in this plane was obtained.