|
This article is cited in 10 scientific papers (total in 10 papers)
Lasers. Active media
Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate
N. B. Zvonkov, B. N. Zvonkov, A. V. Ershov, E. A. Uskova, G. A. Maksimov Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
A semiconductor laser based on a new design of the InGaAs/GaAs/InGaP structure was developed and investigated experimentally. The radiation from this laser was coupled out through the substrate, which ensured a narrow angular distribution in a plane perpendicular to the p – n junction. An output power of 0.63 W in a beam with the radiation divergence of 1.2° in this plane was obtained.
Received: 01.04.1998
Citation:
N. B. Zvonkov, B. N. Zvonkov, A. V. Ershov, E. A. Uskova, G. A. Maksimov, “Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate”, Kvantovaya Elektronika, 25:7 (1998), 622–624 [Quantum Electron., 28:7 (1998), 605–607]
Linking options:
https://www.mathnet.ru/eng/qe1287 https://www.mathnet.ru/eng/qe/v25/i7/p622
|
Statistics & downloads: |
Abstract page: | 217 | Full-text PDF : | 204 | First page: | 1 |
|