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Fizika Tverdogo Tela, 2017, Volume 59, Issue 11, Pages 2196–2199
DOI: https://doi.org/10.21883/FTT.2017.11.45060.09k (Mi ftt9400) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XX International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 13-16, 2017
Optical Properties

Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (472 kB) Citations (2)
DOI: https://doi.org/10.21883/FTT.2017.11.45060.09k
Abstract: The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160 K. The magnetic field dependences of the degree of circular polarization are nonlinear with a hysteresis loop at temperatures from 10 to 50 K, and they become linear at higher temperatures. The magnitude of polarization at the saturation magnetization of GaMnAs in the 2000 Oe field remains at the level of ∼0.2%.
English version:
Physics of the Solid State, 2017, Volume 59, Issue 11, Pages 2216–2219
DOI: https://doi.org/10.1134/S1063783417110336
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, “Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer”, Fizika Tverdogo Tela, 59:11 (2017), 2196–2199; Phys. Solid State, 59:11 (2017), 2216–2219
Citation in format AMSBIB
\Bibitem{VikDanZvo17}
\by O.~V.~Vikhrova, Yu.~A.~Danilov, B.~N.~Zvonkov, P.~B.~Demina, M.~V.~Dorokhin, I.~L.~Kalentyeva, A.~V.~Kudrin
\paper Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer
\jour Fizika Tverdogo Tela
\yr 2017
\vol 59
\issue 11
\pages 2196--2199
\mathnet{http://mi.mathnet.ru/ftt9400}
\crossref{https://doi.org/10.21883/FTT.2017.11.45060.09k}
\elib{https://elibrary.ru/item.asp?id=30554685}
\transl
\jour Phys. Solid State
\yr 2017
\vol 59
\issue 11
\pages 2216--2219
\crossref{https://doi.org/10.1134/S1063783417110336}
Linking options:
  • https://www.mathnet.ru/eng/ftt9400
  • https://www.mathnet.ru/eng/ftt/v59/i11/p2196
    • This publication is cited in the following 2 articles:
    1. O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer”, Phys. Solid State, 63:3 (2021), 425–434  mathnet  mathnet  crossref  crossref
    2. A. V. Alaferdov, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, S. A. Moshkalev, “The use of films of multilayer graphene as coatings of light-emitting GaAs structures”, Optics and Spectroscopy, 128:3 (2020), 387–394  mathnet  mathnet  crossref  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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