Fizika Tverdogo Tela
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika Tverdogo Tela, 2017, Volume 59, Issue 11, Pages 2196–2199
DOI: https://doi.org/10.21883/FTT.2017.11.45060.09k
(Mi ftt9400)
 

This article is cited in 2 scientific papers (total in 2 papers)

XX International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 13-16, 2017
Optical Properties

Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (472 kB) Citations (2)
Abstract: The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160 K. The magnetic field dependences of the degree of circular polarization are nonlinear with a hysteresis loop at temperatures from 10 to 50 K, and they become linear at higher temperatures. The magnitude of polarization at the saturation magnetization of GaMnAs in the 2000 Oe field remains at the level of $\sim$0.2%.
English version:
Physics of the Solid State, 2017, Volume 59, Issue 11, Pages 2216–2219
DOI: https://doi.org/10.1134/S1063783417110336
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, “Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer”, Fizika Tverdogo Tela, 59:11 (2017), 2196–2199; Phys. Solid State, 59:11 (2017), 2216–2219
Citation in format AMSBIB
\Bibitem{VikDanZvo17}
\by O.~V.~Vikhrova, Yu.~A.~Danilov, B.~N.~Zvonkov, P.~B.~Demina, M.~V.~Dorokhin, I.~L.~Kalentyeva, A.~V.~Kudrin
\paper Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer
\jour Fizika Tverdogo Tela
\yr 2017
\vol 59
\issue 11
\pages 2196--2199
\mathnet{http://mi.mathnet.ru/ftt9400}
\crossref{https://doi.org/10.21883/FTT.2017.11.45060.09k}
\elib{https://elibrary.ru/item.asp?id=30554685}
\transl
\jour Phys. Solid State
\yr 2017
\vol 59
\issue 11
\pages 2216--2219
\crossref{https://doi.org/10.1134/S1063783417110336}
Linking options:
  • https://www.mathnet.ru/eng/ftt9400
  • https://www.mathnet.ru/eng/ftt/v59/i11/p2196
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika Tverdogo Tela Fizika Tverdogo Tela
    Statistics & downloads:
    Abstract page:33
    Full-text PDF :15
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024