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This article is cited in 2 scientific papers (total in 2 papers)
XX International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 13-16, 2017
Optical Properties
Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160 K. The magnetic field dependences of the degree of circular polarization are nonlinear with a hysteresis loop at temperatures from 10 to 50 K, and they become linear at higher temperatures. The magnitude of polarization at the saturation magnetization of GaMnAs in the 2000 Oe field remains at the level of $\sim$0.2%.
Citation:
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, “Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer”, Fizika Tverdogo Tela, 59:11 (2017), 2196–2199; Phys. Solid State, 59:11 (2017), 2216–2219
Linking options:
https://www.mathnet.ru/eng/ftt9400 https://www.mathnet.ru/eng/ftt/v59/i11/p2196
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