O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, V. P. Lesnikov, A. V. Nezhdanov, S. A. Pavlov, A. E. Parafin, I. Yu. Pashen'kin, S. M. Plankina, “Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing”, Fizika Tverdogo Tela, 59:11 (2017), 2130–2134; Phys. Solid State, 59:11 (2017), 2150

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Fizika Tverdogo Tela, 2017, Volume 59, Issue 11, Pages 2130–2134
DOI: https://doi.org/10.21883/FTT.2017.11.45049.12k (Mi ftt9389)

This article is cited in 6 scientific papers (total in 6 papers)

XX International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 13-16, 2017
Semiconductors

Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing

O. V. Vikhrova^a, Yu. A. Danilov^a, B. N. Zvonkov^a, A. V. Zdoroveyshchev^a, A. V. Kudrin^a, V. P. Lesnikov^a, A. V. Nezhdanov^a, S. A. Pavlov^b, A. E. Parafin^ab, I. Yu. Pashen'kin^a, S. M. Plankina^a

^a Lobachevsky State University of Nizhny Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Full-text PDF (277 kB) Citations (6)

DOI: https://doi.org/10.21883/FTT.2017.11.45049.12k

Abstract: Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A$^{3}$B$^{5}$: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of $\sim$30 ns was used. It is shown experimentally that at a pulse energy of an excimer laser of $>$ 230 mJ/cm$^2$, the hole concentration in GaAs: Mn layers increases to 3 $\times$ 10$^{20}$ cm$^{-3}$. The negative magnetoresistance and the anomalous Hall effect with a hysteresis loop for annealed GaAs: Mn samples remain the same up to 80–100 K. Similar changes are observed for InAs: Mn layers as a result of laser annealing.

English version:
Physics of the Solid State, 2017, Volume 59, Issue 11, Pages 2150–2154
DOI: https://doi.org/10.1134/S1063783417110324

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, V. P. Lesnikov, A. V. Nezhdanov, S. A. Pavlov, A. E. Parafin, I. Yu. Pashen'kin, S. M. Plankina, “Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing”, Fizika Tverdogo Tela, 59:11 (2017), 2130–2134; Phys. Solid State, 59:11 (2017), 2150–2154

Citation in format AMSBIB

\Bibitem{VikDanZvo17}

\by O.~V.~Vikhrova, Yu.~A.~Danilov, B.~N.~Zvonkov, A.~V.~Zdoroveyshchev, A.~V.~Kudrin, V.~P.~Lesnikov, A.~V.~Nezhdanov, S.~A.~Pavlov, A.~E.~Parafin, I.~Yu.~Pashen'kin, S.~M.~Plankina

\paper Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing

\jour Fizika Tverdogo Tela

\yr 2017

\vol 59

\issue 11

\pages 2130--2134

\mathnet{http://mi.mathnet.ru/ftt9389}

\crossref{https://doi.org/10.21883/FTT.2017.11.45049.12k}

\elib{https://elibrary.ru/item.asp?id=30554674}

\transl

\jour Phys. Solid State

\yr 2017

\vol 59

\issue 11

\pages 2150--2154

\crossref{https://doi.org/10.1134/S1063783417110324}

Linking options:

https://www.mathnet.ru/eng/ftt9389

https://www.mathnet.ru/eng/ftt/v59/i11/p2130

This publication is cited in the following 6 articles:

Irina Kalentyeva, O.V. Vikhrova, Yu.A. Danilov, M.V. Dorokhin, B.N. Zvonkov, Yu.M. Kuznetsov, A.V. Kudrin, A.E. Parafin, P.A. Yunin, D.V. Danilov, “Effect of Pulsed Laser Annealing on the Properties of (Ga,Mn)As Layers”, SSRN Journal, 2022
I.L. Kalentyeva, O.V. Vikhrova, Yu.A. Danilov, M.V. Dorokhin, B.N. Zvonkov, Yu.M. Kuznetsov, A.V. Kudrin, D.V. Khomitsky, A.E. Parafin, P.A. Yunin, D.V. Danilov, “Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers”, Journal of Magnetism and Magnetic Materials, 556 (2022), 169360
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer”, Phys. Solid State, 63:3 (2021), 425–434
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, M. N. Drozdov, D. A. Zdoroveishchev, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Kudrin, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, “Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer”, Phys. Solid State, 63:11 (2021), 1593–1600
M Ved, M Dorokhin, E Malysheva, A Zdoroveyshchev, Yu Danilov, A Parafin, Yu Kuznetsov, “On the mechanism of spin-polarized injection in (Ga,Mn)As/n+GaAs/InGaAs Zener tunnel diode”, J. Phys.: Conf. Ser., 1124 (2018), 061005
E. I. Malysheva, M. V. Dorokhin, Yu. A. Danilov, A. E. Parafin, M. V. Ved, A. V. Kudrin, A. V. Zdoroveyshchev, “Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment”, Phys. Solid State, 60:11 (2018), 2182–

Citing articles in Google Scholar: Russian citations, English citations
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