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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 9, Pages 868–872
DOI: https://doi.org/10.21883/FTP.2020.09.49823.15 (Mi phts5162) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures

Yu. A. Danilovab, M. V. Vedb, O. V. Vikhrovab, N. V. Dikarevab, M. N. Drozdovc, B. N. Zvonkovb, V. A. Koval'skiid, R. N. Kriukovb, A. V. Kudrinab, V. P. Lesnikovb, P. A. Yuninc, A. M. Andreeva

a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
d Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow region, Russia
Full-text PDF (342 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.09.49823.15
Abstract: The properties of carbon layers produced on GaAs substrates by the pulsed laser sputtering of pyrolytic graphite in vacuum are studied. The optimal deposition temperature is 500$^\circ$C; in this case, the growth rate of carbon layers is 0.19 nm s$^{-1}$. The Raman spectra correspond to the spectrum of nanocrystalline graphite. The carbon layers possess $p$-type conductivity, exhibit a semiconductor-type temperature dependence of the resistance, and are used as a conductive transparent coating of GaAs structures with an InGaAs quantum well. The structures show noticeable electroluminescence even at small pump currents and are photosensitive in the range 1.5–2.2 eV at up to room temperature of measurements.
Keywords: carbon nanolayers, graphene, electroluminescence.
Funding agency Grant number
Russian Foundation for Basic Research 18-29-19137_мк
Russian Science Foundation 19-19-00545
The study was supported by the Russian Foundation for Basic Research, project no. 18-29-19137_mk. The part of the study concerned with adjustment of the technology of laser deposition was supported in part by the Russian Science Foundation, project no. 19-19-00545.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 9, Pages 1059–1063
DOI: https://doi.org/10.1134/S1063782620090079
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. A. Danilov, M. V. Ved, O. V. Vikhrova, N. V. Dikareva, M. N. Drozdov, B. N. Zvonkov, V. A. Koval'skii, R. N. Kriukov, A. V. Kudrin, V. P. Lesnikov, P. A. Yunin, A. M. Andreev, “Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 868–872; Semiconductors, 54:9 (2020), 1059–1063
Citation in format AMSBIB
\Bibitem{DanVedVik20}
\by Yu.~A.~Danilov, M.~V.~Ved, O.~V.~Vikhrova, N.~V.~Dikareva, M.~N.~Drozdov, B.~N.~Zvonkov, V.~A.~Koval'skii, R.~N.~Kriukov, A.~V.~Kudrin, V.~P.~Lesnikov, P.~A.~Yunin, A.~M.~Andreev
\paper Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 9
\pages 868--872
\mathnet{http://mi.mathnet.ru/phts5162}
\crossref{https://doi.org/10.21883/FTP.2020.09.49823.15}
\elib{https://elibrary.ru/item.asp?id=44154190}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 9
\pages 1059--1063
\crossref{https://doi.org/10.1134/S1063782620090079}
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