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This article is cited in 1 scientific paper (total in 1 paper)
Lasers
Substrate-emitting semiconductor laser with a trapezoidal active region
N. V. Dikarevaa, S. M. Nekorkina, M. V. Karzanovaa, B. N. Zvonkova, V. Ya. Aleshkinbc, A. A. Dubinovbc, A. A. Afonenkod a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c National Research Lobachevsky State University of Nizhny Novgorod
d Belarusian State University, Minsk
Abstract:
Semiconductor lasers with a narrow (~2°) directional pattern in the planes both parallel and perpendicular to the p–n junction are fabricated. To achieve a low radiation divergence in the p–n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directional pattern in the plane perpendicular to the p–n junction was ensured by the use of a leaky mode, through which more than 90% of laser power was coupled out.
Keywords:
semiconductor laser, active region, quantum well, leaky mode.
Received: 18.12.2013
Citation:
N. V. Dikareva, S. M. Nekorkin, M. V. Karzanova, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, A. A. Afonenko, “Substrate-emitting semiconductor laser with a trapezoidal active region”, Kvantovaya Elektronika, 44:4 (2014), 286–288 [Quantum Electron., 44:4 (2014), 286–288]
Linking options:
https://www.mathnet.ru/eng/qe15894 https://www.mathnet.ru/eng/qe/v44/i4/p286
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Abstract page: | 295 | Full-text PDF : | 104 | References: | 35 | First page: | 15 |
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