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Fizika Tverdogo Tela, 2021, Volume 63, Issue 7, Pages 866–873
DOI: https://doi.org/10.21883/FTT.2021.07.51035.038
(Mi ftt8088)
 

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductors

Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type

V. P. Lesnikov, M. V. Ved, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, I. L. Kalentyeva, A. V. Kudrin, R. N. Kriukov

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhny Novgorod, Russia
Full-text PDF (288 kB) Citations (2)
Abstract: Diode structures with ferromagnetic narrow-gap semiconductors A$^{3}$FeB$^{5}$ as only $p$-region ($p$-GaFeSb/$n$-InGaAs), only $n$-region ($n$-InFeSb/$p$-InGaAs), $p$- and $n$-regions ($p$-GaFeSb/$n$-InFeSb, $p$-GaFeSb/$n$-InFeAs) for $p$$n$ junction were fabricated by pulsed laser deposition in vacuum. The composition of ferromagnetic semiconductor layers and their thicknesses, determined by X-ray photoelectron spectroscopy, generally correspond to the technological data for diode structures. In particular, the thickness of the GaFeSb layer is 25–30 nm, and the thickness of the InFeAs and InFeSb layers is 35–40 nm. The iron content in InFeSb ranges from 25 to 35 at.%. The GaFeSb layer contains from 15 to 41 iron at.%, and the InFeAs layer – 35 iron at.%. The chemical analysis of the structures revealed the presence of chemical bonds Fe-As (Sb), In-Fe and Fe-Ga. Therefore, it can be assumed that Fe atoms in the fabricated structures can substitute for elements of groups III and V simultaneously. All structures exhibit the effect of negative magnetoresistance at sufficiently low observation voltages of the effect (up to 50 mV), in low magnetic fields (up to 3600 Oe), and at high measurement temperatures. For GaFeSb/InFeSb, GaFeSb/InFeAs diodes, negative magnetoresistance was first observed at room temperature. The hysteresis form of the dependences of the resistance on the magnetic field suggests the effect of the ferromagnetic properties of the layers of narrow-gap semiconductors on the transport of carriers in the structures.
Keywords: pulsed laser deposition, ferromagnetic semiconductor, diode structures, magnetoresistance.
Funding agency Grant number
Russian Science Foundation 19-19-00545
18-79-10088
The work was supported by Russian Science Foundation (project no. 19-19-00545 manufacturing and investigation of the structures with one layer of magnetic semiconductor, and project no. 18-79-10088 manufacturing and investigation of the structures with two layers of magnetic semiconductors).
Received: 28.02.2021
Revised: 28.02.2021
Accepted: 02.03.2021
English version:
Physics of the Solid State, 2021, Volume 63, Issue 7, Pages 1028–1035
DOI: https://doi.org/10.1134/S1063783421070131
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. P. Lesnikov, M. V. Ved, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, I. L. Kalentyeva, A. V. Kudrin, R. N. Kriukov, “Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type”, Fizika Tverdogo Tela, 63:7 (2021), 866–873; Phys. Solid State, 63:7 (2021), 1028–1035
Citation in format AMSBIB
\Bibitem{LesVedVik21}
\by V.~P.~Lesnikov, M.~V.~Ved, O.~V.~Vikhrova, Yu.~A.~Danilov, B.~N.~Zvonkov, A.~V.~Zdoroveyshchev, I.~L.~Kalentyeva, A.~V.~Kudrin, R.~N.~Kriukov
\paper Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 7
\pages 866--873
\mathnet{http://mi.mathnet.ru/ftt8088}
\crossref{https://doi.org/10.21883/FTT.2021.07.51035.038}
\elib{https://elibrary.ru/item.asp?id=46346434}
\transl
\jour Phys. Solid State
\yr 2021
\vol 63
\issue 7
\pages 1028--1035
\crossref{https://doi.org/10.1134/S1063783421070131}
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  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika Tverdogo Tela Fizika Tverdogo Tela
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