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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2008, Volume 87, Issue 3, Pages 192–198
(Mi jetpl35)
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This article is cited in 19 scientific papers (total in 19 papers)
CONDENSED MATTER
Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells
B. A. Aronzonab, A. S. Lagutina, V. V. Ryl'kovab, V. V. Tugusheva, V. N. Men'shova, A. V. Lashkulc, R. Laihoc, O. V. Vikhrovad, Yu. A. Danilovd, B. N. Zvonkovd a Russian Research Centre Kurchatov Institute, pl. Akademika Kurchatova 1, Moscow, 123182, Russia
b Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences, Izhorskaya ul. 13/19, Moscow, 127412, Russia
c Wihuri Physical laboratory, Department of Physics, University of Turku, FIN-20014, Turku, Finland
d Research Physicotechnical Institute, Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia
Abstract:
The field and temperature dependences of the magnetization of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs/In}_x\mathrm{Ga}_{1-x}\mathrm{As/GaAs}$ quantum wells with the $\delta\langle\mathrm{Mn}\rangle$ layer separated from the well by a 3-nm $\mathrm{GaAs}$ spacer have been studied in the temperature range of 3–300 K in a magnetic field up to 6 T. An external magnetic-field-induced phase transition to a ferromagnetic state with a magnetization hysteresis loop shifted from a zero magnetic field has been found to occur at a temperature below 40 K. A theoretical model is proposed that implies the coexistence of ferromagnetically and antiferromagnetically ordered regions within the $\mathrm{GaAs}$ layers.
Received: 26.12.2007
Citation:
B. A. Aronzon, A. S. Lagutin, V. V. Ryl'kov, V. V. Tugushev, V. N. Men'shov, A. V. Lashkul, R. Laiho, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, “Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008), 192–198; JETP Letters, 87:3 (2008), 164–169
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https://www.mathnet.ru/eng/jetpl35 https://www.mathnet.ru/eng/jetpl/v87/i3/p192
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