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Kvantovaya Elektronika, 2010, Volume 40, Number 10, Pages 855–857 (Mi qe14405)  

This article is cited in 6 scientific papers (total in 6 papers)

Lasers

Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern

V. Ya. Aleshkina, T. S. Babushkinab, A. A. Biryukovb, A. A. Dubinova, B. N. Zvonkovb, M. N. Kolesnikovb, V. I. Nekorkinb

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Scientific-Research Physicotechnical Institute N. I. Lobachevsky State University of Nizhnii Novgorod
Full-text PDF (95 kB) Citations (6)
References:
Abstract: A leaky-wave semiconductor laser diode has been developed based on the InGaAs/GaAs/InGaP heterostructure. This design made it possible to obtain a high radiation output in a narrow angular range (about 1°—2°) with an energy of 170 μJ in a laser with a cavity length of 0.8 mm and a stripe contact width of 360 μm, pumped by a single current pulse with an amplitude of 88 A and width of 5 μs.
Received: 20.07.2010
English version:
Quantum Electronics, 2010, Volume 40, Issue 10, Pages 855–857
DOI: https://doi.org/10.1070/QE2010v040n10ABEH014405
Bibliographic databases:
Document Type: Article
PACS: 42.55.Px, 42.60.Da, 42.60.Jf
Language: Russian


Citation: V. Ya. Aleshkin, T. S. Babushkina, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, V. I. Nekorkin, “Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern”, Kvantovaya Elektronika, 40:10 (2010), 855–857 [Quantum Electron., 40:10 (2010), 855–857]
Linking options:
  • https://www.mathnet.ru/eng/qe14405
  • https://www.mathnet.ru/eng/qe/v40/i10/p855
  • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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