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This article is cited in 6 scientific papers (total in 6 papers)
Lasers
Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern
V. Ya. Aleshkina, T. S. Babushkinab, A. A. Biryukovb, A. A. Dubinova, B. N. Zvonkovb, M. N. Kolesnikovb, V. I. Nekorkinb a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Scientific-Research Physicotechnical Institute N. I. Lobachevsky State University of Nizhnii Novgorod
Abstract:
A leaky-wave semiconductor laser diode has been developed based on the InGaAs/GaAs/InGaP heterostructure. This design made it possible to obtain a high radiation output in a narrow angular range (about 1°—2°) with an energy of 170 μJ in a laser with a cavity length of 0.8 mm and a stripe contact width of 360 μm, pumped by a single current pulse with an amplitude of 88 A and width of 5 μs.
Received: 20.07.2010
Citation:
V. Ya. Aleshkin, T. S. Babushkina, A. A. Biryukov, A. A. Dubinov, B. N. Zvonkov, M. N. Kolesnikov, V. I. Nekorkin, “Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern”, Kvantovaya Elektronika, 40:10 (2010), 855–857 [Quantum Electron., 40:10 (2010), 855–857]
Linking options:
https://www.mathnet.ru/eng/qe14405 https://www.mathnet.ru/eng/qe/v40/i10/p855
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