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This article is cited in 3 scientific papers (total in 3 papers)
Semiconductor physics
GaAs-based laser diode with InGaAs waveguide quantum wells
N. V. Dikarevaa, B. N. Zvonkova, I. V. Samartseva, S. M. Nekorkina, N. V. Baidusa, A. A. Dubinovab a National Research Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
This paper presents the results of research of electrically pumped InGaAs/GaAs laser on waveguide quantum wells, operating at room temperature. The minimum threshold current was 15 A. The stable lasing at a wavelength of 1010 nm was obtained, and the width of the radiation pattern in a plane perpendicular to the layers of the structure was (10 $\pm$ 2) angular degrees.
Keywords:
GaAs, laser diode, waveguide, quantum well, radiation pattern.
Received: 08.08.2019 Revised: 12.08.2019 Accepted: 12.08.2019
Citation:
N. V. Dikareva, B. N. Zvonkov, I. V. Samartsev, S. M. Nekorkin, N. V. Baidus, A. A. Dubinov, “GaAs-based laser diode with InGaAs waveguide quantum wells”, Fizika i Tekhnika Poluprovodnikov, 53:12 (2019), 1718–1720; Semiconductors, 53:12 (2019), 1709–1711
Linking options:
https://www.mathnet.ru/eng/phts5341 https://www.mathnet.ru/eng/phts/v53/i12/p1718
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