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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 8, Pages 873–880
DOI: https://doi.org/10.21883/FTP.2018.08.46212.8708
(Mi phts5756)
 

This article is cited in 9 scientific papers (total in 9 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions

G. E. Yakovleva, M. V. Dorokhinb, V. I. Zubkova, A. L. Dudinc, A. V. Zdoroveyshchevb, E. I. Malyshevab, Yu. A. Danilovb, B. N. Zvonkovb, A. V. Kudrinb

a Saint Petersburg Electrotechnical University "LETI"
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Svetlana-Rost JSC, St. Petersburg, 194156, Russia
Full-text PDF (249 kB) Citations (9)
Abstract: GaAs light-emitting (LED) and HEMT structures with $\delta$-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and $\delta$ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of electrochemical capacitance- voltage profiling in different heterostructure types are analyzed. A method of integration of capacitance- voltage curves at each etching stage was suggested. This method provides the efficient separation of responses from closely located layers, particularly the quantum well and $\delta$ layer.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 8.1751.2017/ПЧ
14.582.21.0010
МК-8221.2016.2
Russian Foundation for Basic Research 15-02-07824_а
16-07-01102_а
Saint Petersburg State University М.5.1.2
Received: 21.08.2017
Accepted: 08.11.2017
English version:
Semiconductors, 2018, Volume 52, Issue 8, Pages 1004–1011
DOI: https://doi.org/10.1134/S1063782618080250
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, “Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 873–880; Semiconductors, 52:8 (2018), 1004–1011
Citation in format AMSBIB
\Bibitem{YakDorZub18}
\by G.~E.~Yakovlev, M.~V.~Dorokhin, V.~I.~Zubkov, A.~L.~Dudin, A.~V.~Zdoroveyshchev, E.~I.~Malysheva, Yu.~A.~Danilov, B.~N.~Zvonkov, A.~V.~Kudrin
\paper Specific features of the electrochemical capacitance--voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 8
\pages 873--880
\mathnet{http://mi.mathnet.ru/phts5756}
\crossref{https://doi.org/10.21883/FTP.2018.08.46212.8708}
\elib{https://elibrary.ru/item.asp?id=35269429}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 8
\pages 1004--1011
\crossref{https://doi.org/10.1134/S1063782618080250}
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  • This publication is cited in the following 9 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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