G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, “Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 873–880; Semiconductors, 52:8 (2018), 1004

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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 8, Pages 873–880
DOI: https://doi.org/10.21883/FTP.2018.08.46212.8708 (Mi phts5756)

This article is cited in 9 scientific papers (total in 9 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions

G. E. Yakovlev^a, M. V. Dorokhin^b, V. I. Zubkov^a, A. L. Dudin^c, A. V. Zdoroveyshchev^b, E. I. Malysheva^b, Yu. A. Danilov^b, B. N. Zvonkov^b, A. V. Kudrin^b

^a Saint Petersburg Electrotechnical University "LETI"
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^c Svetlana-Rost JSC, St. Petersburg, 194156, Russia

Full-text PDF (249 kB) Citations (9)

DOI: https://doi.org/10.21883/FTP.2018.08.46212.8708

Abstract: GaAs light-emitting (LED) and HEMT structures with

δ

$\delta$ -doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and

δ

$\delta$ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of electrochemical capacitance- voltage profiling in different heterostructure types are analyzed. A method of integration of capacitance- voltage curves at each etching stage was suggested. This method provides the efficient separation of responses from closely located layers, particularly the quantum well and

δ

$\delta$ layer.

Funding agency	Grant number
Ministry of Education and Science of the Russian Federation	8.1751.2017/ПЧ 14.582.21.0010 МК-8221.2016.2
Russian Foundation for Basic Research	15-02-07824_а 16-07-01102_а
Saint Petersburg State University	М.5.1.2

Received: 21.08.2017
Accepted: 08.11.2017

English version:
Semiconductors, 2018, Volume 52, Issue 8, Pages 1004–1011
DOI: https://doi.org/10.1134/S1063782618080250

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, “Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 873–880; Semiconductors, 52:8 (2018), 1004–1011

Citation in format AMSBIB

\Bibitem{YakDorZub18}

\by G.~E.~Yakovlev, M.~V.~Dorokhin, V.~I.~Zubkov, A.~L.~Dudin, A.~V.~Zdoroveyshchev, E.~I.~Malysheva, Yu.~A.~Danilov, B.~N.~Zvonkov, A.~V.~Kudrin

\paper Specific features of the electrochemical capacitance--voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions

\jour Fizika i Tekhnika Poluprovodnikov

\yr 2018

\vol 52

\issue 8

\pages 873--880

\mathnet{http://mi.mathnet.ru/phts5756}

\crossref{https://doi.org/10.21883/FTP.2018.08.46212.8708}

\elib{https://elibrary.ru/item.asp?id=35269429}

\transl

\jour Semiconductors

\yr 2018

\vol 52

\issue 8

\pages 1004--1011

\crossref{https://doi.org/10.1134/S1063782618080250}

Linking options:

https://www.mathnet.ru/eng/phts5756

https://www.mathnet.ru/eng/phts/v52/i8/p873

This publication is cited in the following 9 articles:

O. L. Golikov, N. E. Kodochigov, S. V. Obolensky, A. S. Puzanov, E. A. Tarasova, S. V. Khazanova, “Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping”, Mikroèlektronika, 53:1 (2024), 3
O. L. Golikov, N. E. Kodochigov, S. V. Obolensky, A. S. Puzanov, E. A. Tarasova, S. V. Khazanova, “Analysis of Nonlinear Distortions of DpHEMT Structures Based on a GaAs/In0.53Ga0.47As Compound with Double-Sided Delta-Doping”, Russ Microelectron, 53:1 (2024), 51
D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev, “The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors”, Semiconductors, 58:3 (2024), 254
Igor A. Salimon, Aleksandr V. Averchenko, Svetlava A. Lipovskikh, Elena A. Skryleva, Artyom V. Novikov, Pavlos G. Lagoudakis, Sakellaris Mailis, “UV laser-induced nanostructured porous oxide in GaAs crystals”, Solid State Sciences, 128 (2022), 106887
G. E. Yakovlev, D. S. Frolov, V. I. Zubkov, “Diagnostics of semiconductor structures by electrochemical capacitance-voltage profiling technique”, Zavod. lab., Diagn. mater., 87:1 (2021), 35
Xianshao Zou, Chuanshuai Li, Xiaojun Su, Yuchen Liu, Daniel Finkelstein-Shapiro, Wei Zhang, Arkady Yartsev, “Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation”, ACS Appl. Mater. Interfaces, 12:25 (2020), 28360
G. E. Yakovlev, I. A. Nyapshaev, I. S. Shahray, D. A. Andronikov, V. I. Zubkov, E. I. Terukov, “Through concentration profiling of heterojunction solar cells”, Tech. Phys. Lett., 45:9 (2019), 890–893
D. S. Frolov, G. E. Yakovlev, V. I. Zubkov, “Technique for the electrochemical capacitance–voltage profiling of heavily doped structures with a sharp doping profile”, Semiconductors, 53:2 (2019), 268–272
Yana V. Ivanova, George E. Yakovlev, Vasily I. Zubkov, “EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES”, Izv. vysš. učebn. zaved. Ross., Radioèlektron., 2018, no. 5, 44

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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