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This article is cited in 8 scientific papers (total in 8 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions
G. E. Yakovleva, M. V. Dorokhinb, V. I. Zubkova, A. L. Dudinc, A. V. Zdoroveyshchevb, E. I. Malyshevab, Yu. A. Danilovb, B. N. Zvonkovb, A. V. Kudrinb a Saint Petersburg Electrotechnical University "LETI"
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Svetlana-Rost JSC, St. Petersburg, 194156, Russia
Abstract:
GaAs light-emitting (LED) and HEMT structures with $\delta$-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and $\delta$ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of electrochemical capacitance- voltage profiling in different heterostructure types are analyzed. A method of integration of capacitance- voltage curves at each etching stage was suggested. This method provides the efficient separation of responses from closely located layers, particularly the quantum well and $\delta$ layer.
Received: 21.08.2017 Accepted: 08.11.2017
Citation:
G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, “Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 873–880; Semiconductors, 52:8 (2018), 1004–1011
Linking options:
https://www.mathnet.ru/eng/phts5756 https://www.mathnet.ru/eng/phts/v52/i8/p873
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