Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm

Semiconductor lasers with a new planar waveguide structure were developed and investigated experimentally. The structure made it possible to reduce the width (by a factor of 1.7) of the angular distribution in a plane perpendicular to the p–n junction and still retain a high value of the factor representing the optical confinement of waves in the waveguide. A single-lobe angular distribution in the same plane was achieved by a new method based on the difference between the optical confinement and optical loss factors for the fundamental and high-order transverse modes.