N. B. Zvonkov, S. A. Akhlestina, A. V. Ershov, B. N. Zvonkov, G. A. Maksimov, E. A. Uskova, “Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm”, Kvantovaya Elektronika, 26:3 (1999), 217–218 [Quantum Electron., 29:3 (1999), 217

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Kvantovaya Elektronika, 1999, Volume 26, Number 3, Pages 217–218 (Mi qe1454)

This article is cited in 9 scientific papers (total in 9 papers)

Lasers

Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm

N. B. Zvonkov^a, S. A. Akhlestina^b, A. V. Ershov^a, B. N. Zvonkov^a, G. A. Maksimov^a, E. A. Uskova^a

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b National Research Lobachevsky State University of Nizhny Novgorod

Full-text PDF (104 kB) Citations (9)

Abstract: InGaP/GaAs/InGaAs semiconductor lasers with broad tunnel-coupled waveguides were developed and investigated experimentally. Output radiation power of 5.2 — 5.8 W was obtained from an emitting region 100 μm wide with a 36° divergence of the emitted radiation in a plane perpendicular to the p – n junction.

Received: 28.10.1998

English version:
Quantum Electronics, 1999, Volume 29, Issue 3, Pages 217–218
DOI: https://doi.org/10.1070/QE1999v029n03ABEH001454

Bibliographic databases:

Document Type: Article

PACS: 42.55.Px, 42.82.Et

Language: Russian

Citation: N. B. Zvonkov, S. A. Akhlestina, A. V. Ershov, B. N. Zvonkov, G. A. Maksimov, E. A. Uskova, “Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm”, Kvantovaya Elektronika, 26:3 (1999), 217–218 [Quantum Electron., 29:3 (1999), 217–218]

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https://www.mathnet.ru/eng/qe1454

https://www.mathnet.ru/eng/qe/v26/i3/p217

This publication is cited in the following 9 articles:

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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