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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor lasers. Physics and Technology
Guiding effect of quantum wells in semiconductor lasers
V. Ya. Aleshkina, N. V. Dikarevab, A. A. Dubinova, B. N. Zvonkovb, M. V. Karzanovab, K. E. Kudryavtseva, S. M. Nekorkinb, A. N. Yablonskiia a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University
Abstract:
The guiding effect of InGaAs quantum wells in GaAs- and InP-based semiconductor lasers has been studied theoretically and experimentally. The results demonstrate that such waveguides can be effectively used in laser structures with a large refractive index difference between the quantum well material and semiconductor matrix and a large number of quantum wells (e.g. in InP-based structures).
Keywords:
semiconductor laser, quantum well, guiding effect.
Received: 08.02.2013 Revised: 27.03.2013
Citation:
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, B. N. Zvonkov, M. V. Karzanova, K. E. Kudryavtsev, S. M. Nekorkin, A. N. Yablonskii, “Guiding effect of quantum wells in semiconductor lasers”, Kvantovaya Elektronika, 43:5 (2013), 401–406 [Quantum Electron., 43:5 (2013), 401–406]
Linking options:
https://www.mathnet.ru/eng/qe15144 https://www.mathnet.ru/eng/qe/v43/i5/p401
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Abstract page: | 352 | Full-text PDF : | 234 | References: | 35 | First page: | 5 |
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