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Fizika Tverdogo Tela, 2020, Volume 62, Issue 3, Pages 373–380
DOI: https://doi.org/10.21883/FTT.2020.03.48999.619 (Mi ftt8465) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductors

Diode heterostructures with a ferromagnetic (Ga, Mn)As layer

B. N. Zvonkova, O. V. Vikhrovaa, Yu. A. Danilova, M. V. Dorokhina, I. L. Kalentyevaa, A. V. Kudrina, A. V. Zdoroveyshcheva, E. A. Larionovaa, V. A. Koval'skiib, O. A. Soltanovichb

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute of Microelectronics Technology and High-Purity Materials RAS
Full-text PDF (241 kB) Citations (2)
DOI: https://doi.org/10.21883/FTT.2020.03.48999.619
Abstract: Diode $p$-(GaMn)As/$n$-InGaAs/$n^+$-GaAs heterostructures with different thicknesses (from 5 to 50 nm) of the (Ga,Mn)As dilute magnetic semiconductor layer have been fabricated and studied. The negative magnetoresistance effect reaching 6–8% is observed in a magnetic field of 3600 Oe; this effect is retained up to temperatures of 70–80 K and related to a decrease in the charge carrier scattering due to ferromagnetic ordering in the (Ga,Mn)As layer. The dependence of the magnetoresistance on the forward bias voltage is nonmonotonic, and the magnetoresistance maximum and the operating voltage rate are dependent on the (Ga,Mn)As layer thickness. The magnetic-field dependence of the magnetoresistance have a hysteresis shape determined by the influence of the tensile stresses in the (Ga,Mn)As layer grown above the relaxed InGaAs on the magnetization component perpendicular to the structure surface.
Keywords: pulsed laser deposition, diode heterostructure, ferromagnetic semiconductor, negative magnetoresistance.
Funding agency Grant number
Russian Science Foundation 19-19-00545
Ministry of Science and Higher Education of the Russian Federation МД-1708.2019.2
This work was supported by the Russian Scientific Foundation, project no. 19-19-00545. The studies of the electroluminescence of the diodes were performed in the framework of the project of the President of the Russian Federation MD-1708.2019.2.
Received: 31.10.2019
Revised: 31.10.2019
Accepted: 31.10.2019
English version:
Physics of the Solid State, 2020, Volume 62, Issue 3, Pages 423–430
DOI: https://doi.org/10.1134/S1063783420030270
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, A. V. Zdoroveyshchev, E. A. Larionova, V. A. Koval'skii, O. A. Soltanovich, “Diode heterostructures with a ferromagnetic (Ga, Mn)As layer”, Fizika Tverdogo Tela, 62:3 (2020), 373–380; Phys. Solid State, 62:3 (2020), 423–430
Citation in format AMSBIB
\Bibitem{ZvoVikDan20}
\by B.~N.~Zvonkov, O.~V.~Vikhrova, Yu.~A.~Danilov, M.~V.~Dorokhin, I.~L.~Kalentyeva, A.~V.~Kudrin, A.~V.~Zdoroveyshchev, E.~A.~Larionova, V.~A.~Koval'skii, O.~A.~Soltanovich
\paper Diode heterostructures with a ferromagnetic (Ga, Mn)As layer
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 3
\pages 373--380
\mathnet{http://mi.mathnet.ru/ftt8465}
\crossref{https://doi.org/10.21883/FTT.2020.03.48999.619}
\elib{https://elibrary.ru/item.asp?id=42776714}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 3
\pages 423--430
\crossref{https://doi.org/10.1134/S1063783420030270}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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