Abstract:
It was studied the possibility of laser annealing modification of the properties of the (Ga,Mn)As layer located on the surface of a quantum-well InGaAs/GaAs structure, while retaining its radiative properties. The structures with four InGaAs/GaAs quantum wells (indium content was varied from 0.08 to 0.25), located at different distances from the (Ga,Mn)As layer, were fabricated by combining the methods of MOCVD-hydride epitaxy and pulsed laser deposition. The LPX-200 excimer laser pulse energy density was varied from 200 to 360 mJ/cm2, and the depth of laser action was determined from the change in the photoluminescence spectra of the quantum wells. In describing the results obtained, a model of the laser annealing process was used, based on solving the problem of heat propagation in a one-dimensional GaAs system, taking into account the (Ga,Mn)As layer on the surface. Changes in the structural and galvanomagnetic properties of the samples as a result of laser irradiation were analyzed. It is shown that as a result of pulsed laser action at a laser energy density range of 250 – 300 mJ/cm2, it is possible to preserve the emissive properties of the active region (InGaAs/GaAs quantum well) located at a distance of 10 – 12 nm from the (Ga,Mn)As layer and modify ferromagnetic properties of the semiconductor (Ga,Mn)As, namely: to increase the temperature of the ferromagnet-paramagnetic phase transition to values of at least 120 K. The results obtained are promising for the development of technology for devices of spin optoelectronics.
Citation:
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer”, Fizika Tverdogo Tela, 63:3 (2021), 346–355; Phys. Solid State, 63:3 (2021), 425–434
\Bibitem{VikDanZvo21}
\by O.~V.~Vikhrova, Yu.~A.~Danilov, B.~N.~Zvonkov, I.~L.~Kalentyeva, Yu.~M.~Kuznetsov, A.~V.~Nezhdanov, A.~E.~Parafin, D.~V.~Khomitsky, I.~N.~Antonov
\paper Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 3
\pages 346--355
\mathnet{http://mi.mathnet.ru/ftt8163}
\crossref{https://doi.org/10.21883/FTT.2021.03.50585.214}
\elib{https://elibrary.ru/item.asp?id=45332239}
\transl
\jour Phys. Solid State
\yr 2021
\vol 63
\issue 3
\pages 425--434
\crossref{https://doi.org/10.1134/S1063783421030185}
Linking options:
https://www.mathnet.ru/eng/ftt8163
https://www.mathnet.ru/eng/ftt/v63/i3/p346
This publication is cited in the following 2 articles:
I.L. Kalentyeva, O.V. Vikhrova, Yu.A. Danilov, M.V. Dorokhin, B.N. Zvonkov, Yu.M. Kuznetsov, A.V. Kudrin, D.V. Khomitsky, A.E. Parafin, P.A. Yunin, D.V. Danilov, “Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers”, Journal of Magnetism and Magnetic Materials, 556 (2022), 169360
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, M. N. Drozdov, D. A. Zdoroveishchev, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Kudrin, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, “Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer”, Phys. Solid State, 63:11 (2021), 1593–1600
Citation in format AMSBIB
Contact us: