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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductors
Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer
O. V. Vikhrovaa, Yu. A. Danilova, B. N. Zvonkova, I. L. Kalentyevaa, Yu. M. Kuznetsova, A. V. Nezhdanovb, A. E. Parafinc, D. V. Khomitskyb, I. N. Antonova a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhny Novgorod, Russia
b Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Abstract:
It was studied the possibility of laser annealing modification of the properties of the (Ga,Mn)As layer located on the surface of a quantum-well InGaAs/GaAs structure, while retaining its radiative properties. The structures with four InGaAs/GaAs quantum wells (indium content was varied from 0.08 to 0.25), located at different distances from the (Ga,Mn)As layer, were fabricated by combining the methods of MOCVD-hydride epitaxy and pulsed laser deposition. The LPX-200 excimer laser pulse energy density was varied from 200 to 360 mJ/cm$^2$, and the depth of laser action was determined from the change in the photoluminescence spectra of the quantum wells. In describing the results obtained, a model of the laser annealing process was used, based on solving the problem of heat propagation in a one-dimensional GaAs system, taking into account the (Ga,Mn)As layer on the surface. Changes in the structural and galvanomagnetic properties of the samples as a result of laser irradiation were analyzed. It is shown that as a result of pulsed laser action at a laser energy density range of 250 – 300 mJ/cm$^2$, it is possible to preserve the emissive properties of the active region (InGaAs/GaAs quantum well) located at a distance of 10 – 12 nm from the (Ga,Mn)As layer and modify ferromagnetic properties of the semiconductor (Ga,Mn)As, namely: to increase the temperature of the ferromagnet-paramagnetic phase transition to values of at least 120 K. The results obtained are promising for the development of technology for devices of spin optoelectronics.
Keywords:
pulsed laser annealing, MOCVD hydride epitaxy, pulsed laser deposition, quantum-well structure, ferromagnetic semiconductor (Ga, Mn)As.
Received: 09.10.2020 Revised: 20.11.2020 Accepted: 24.11.2020
Citation:
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer”, Fizika Tverdogo Tela, 63:3 (2021), 346–355; Phys. Solid State, 63:3 (2021), 425–434
Linking options:
https://www.mathnet.ru/eng/ftt8163 https://www.mathnet.ru/eng/ftt/v63/i3/p346
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