Fizika Tverdogo Tela
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika Tverdogo Tela:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika Tverdogo Tela, 2021, Volume 63, Issue 3, Pages 346–355
DOI: https://doi.org/10.21883/FTT.2021.03.50585.214
(Mi ftt8163)
 

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductors

Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer

O. V. Vikhrovaa, Yu. A. Danilova, B. N. Zvonkova, I. L. Kalentyevaa, Yu. M. Kuznetsova, A. V. Nezhdanovb, A. E. Parafinc, D. V. Khomitskyb, I. N. Antonova

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhny Novgorod, Russia
b Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Full-text PDF (553 kB) Citations (2)
Abstract: It was studied the possibility of laser annealing modification of the properties of the (Ga,Mn)As layer located on the surface of a quantum-well InGaAs/GaAs structure, while retaining its radiative properties. The structures with four InGaAs/GaAs quantum wells (indium content was varied from 0.08 to 0.25), located at different distances from the (Ga,Mn)As layer, were fabricated by combining the methods of MOCVD-hydride epitaxy and pulsed laser deposition. The LPX-200 excimer laser pulse energy density was varied from 200 to 360 mJ/cm$^2$, and the depth of laser action was determined from the change in the photoluminescence spectra of the quantum wells. In describing the results obtained, a model of the laser annealing process was used, based on solving the problem of heat propagation in a one-dimensional GaAs system, taking into account the (Ga,Mn)As layer on the surface. Changes in the structural and galvanomagnetic properties of the samples as a result of laser irradiation were analyzed. It is shown that as a result of pulsed laser action at a laser energy density range of 250 – 300 mJ/cm$^2$, it is possible to preserve the emissive properties of the active region (InGaAs/GaAs quantum well) located at a distance of 10 – 12 nm from the (Ga,Mn)As layer and modify ferromagnetic properties of the semiconductor (Ga,Mn)As, namely: to increase the temperature of the ferromagnet-paramagnetic phase transition to values of at least 120 K. The results obtained are promising for the development of technology for devices of spin optoelectronics.
Keywords: pulsed laser annealing, MOCVD hydride epitaxy, pulsed laser deposition, quantum-well structure, ferromagnetic semiconductor (Ga, Mn)As.
Funding agency Grant number
Russian Science Foundation 19-19-00545
This work was supported by the Russian Scientific Foundation, project no. 19-19-00545.
Received: 09.10.2020
Revised: 20.11.2020
Accepted: 24.11.2020
English version:
Physics of the Solid State, 2021, Volume 63, Issue 3, Pages 425–434
DOI: https://doi.org/10.1134/S1063783421030185
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer”, Fizika Tverdogo Tela, 63:3 (2021), 346–355; Phys. Solid State, 63:3 (2021), 425–434
Citation in format AMSBIB
\Bibitem{VikDanZvo21}
\by O.~V.~Vikhrova, Yu.~A.~Danilov, B.~N.~Zvonkov, I.~L.~Kalentyeva, Yu.~M.~Kuznetsov, A.~V.~Nezhdanov, A.~E.~Parafin, D.~V.~Khomitsky, I.~N.~Antonov
\paper Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 3
\pages 346--355
\mathnet{http://mi.mathnet.ru/ftt8163}
\crossref{https://doi.org/10.21883/FTT.2021.03.50585.214}
\elib{https://elibrary.ru/item.asp?id=45332239}
\transl
\jour Phys. Solid State
\yr 2021
\vol 63
\issue 3
\pages 425--434
\crossref{https://doi.org/10.1134/S1063783421030185}
Linking options:
  • https://www.mathnet.ru/eng/ftt8163
  • https://www.mathnet.ru/eng/ftt/v63/i3/p346
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika Tverdogo Tela Fizika Tverdogo Tela
    Statistics & downloads:
    Abstract page:55
    Full-text PDF :26
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024