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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, P. B. Demina, M. V. Dorokhin, M. N. Drozdov, D. A. Zdoroveishchev, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Kudrin, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, “Pulsed laser irradiation of light-emitting structures with a (Ga,Mn)As layer”, Fizika Tverdogo Tela, 63:9 (2021), 1245–1252   ; Phys. Solid State, 63:11 (2021), 1593–1600 |
| 2. |
V. P. Lesnikov, M. V. Ved, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, I. L. Kalentyeva, A. V. Kudrin, R. N. Kriukov, “Diode heterostructures with narrow-gap ferromagnetic A$^{3}$FeB$^{5}$ semiconductors of various conduction type”, Fizika Tverdogo Tela, 63:7 (2021), 866–873 ; Phys. Solid State, 63:7 (2021), 1028–1035 |
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| 3. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, Yu. M. Kuznetsov, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Action of excimer laser pulses on light-emitting InGaAs/GaAs structures with a (Ga,Mn)As-layer”, Fizika Tverdogo Tela, 63:3 (2021), 346–355 ; Phys. Solid State, 63:3 (2021), 425–434 |
2
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| 4. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, A. V. Zdoroveyshchev, M. V. Dorokhin, Yu. A. Dudin, A. V. Kudrin, M. P. Temiryazeva, A. G. Temiryazev, S. A. Nikitov, A. V. Sadovnikov, “Effect of ion irradiation on the magnetic properties of CoPt films”, Fizika Tverdogo Tela, 63:3 (2021), 324–332 ; Phys. Solid State, 63:3 (2021), 386–394 |
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| 5. |
Yu. A. Danilov, A. V. Alaferdov, O. V. Vikhrova, D. A. Zdoroveishchev, V. A. Koval'skii, R. N. Kriukov, Yu. M. Kuznetsov, V. P. Lesnikov, A. V. Nezhdanov, M. N. Drozdov, “Doping of carbon layers grown by the pulsed laser technique”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 637–643 ; Semiconductors, 55:8 (2021), 660–666 |
| 6. |
M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov, “Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021), 38–41 |
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2020 |
| 7. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, A. V. Zdoroveyshchev, E. A. Larionova, V. A. Koval'skii, O. A. Soltanovich, “Diode heterostructures with a ferromagnetic (Ga, Mn)As layer”, Fizika Tverdogo Tela, 62:3 (2020), 373–380 ; Phys. Solid State, 62:3 (2020), 423–430 |
2
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| 8. |
A. V. Alaferdov, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, S. A. Moshkalev, “The use of films of multilayer graphene as coatings of light-emitting GaAs structures”, Optics and Spectroscopy, 128:3 (2020), 399–406 ; Optics and Spectroscopy, 128:3 (2020), 387–394 |
| 9. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitsky, I. N. Antonov, “Pulsed laser irradiation of GaAs-based light-emitting structures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1336–1343 ; Semiconductors, 54:12 (2020), 1598–1604 |
4
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| 10. |
M. V. Dorokhin, P. B. Demina, Yu. A. Danilov, O. V. Vikhrova, Yu. M. Kuznetsov, M. V. Ved, F. Iikawa, M. A. G. Balanta, “Time-resolved photoluminescence in heterostructures with InGaAs:Cr/GaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1139–1144 ; Semiconductors, 54:10 (2020), 1341–1346 |
| 11. |
Yu. A. Danilov, M. V. Ved, O. V. Vikhrova, N. V. Dikareva, M. N. Drozdov, B. N. Zvonkov, V. A. Koval'skii, R. N. Kriukov, A. V. Kudrin, V. P. Lesnikov, P. A. Yunin, A. M. Andreev, “Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 868–872 ; Semiconductors, 54:9 (2020), 1059–1063 |
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| 12. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, P. B. Demina, M. N. Drozdov, A. V. Zdoroveyshchev, R. N. Kriukov, A. V. Nezhdanov, I. N. Antonov, S. M. Plankina, M. P. Temiryazeva, “Formation of carbon layers by the thermal decomposition of carbon tetrachloride in a reactor for MOCVD epitaxy”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 801–806 ; Semiconductors, 54:8 (2020), 956–960 |
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| 13. |
M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, D. A. Pavlov, Yu. V. Usov, V. E. Milin, Yu. A. Danilov, “Circularly polarized electroluminescence of spin LEDs with a ferromagnetic (In,Fe)Sb injector”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:14 (2020), 17–20 ; Tech. Phys. Lett., 46:7 (2020), 691–694 |
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2019 |
| 14. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, Yu. A. Dudin, A. V. Zdoroveyshchev, A. V. Kudrin, M. P. Temiryazeva, A. G. Temiryazev, S. A. Nikitov, A. V. Sadovnikov, “Modifying the magnetic properties of the CoPt alloy by ion irradiation”, Fizika Tverdogo Tela, 61:9 (2019), 1694–1699 ; Phys. Solid State, 61:9 (2019), 1646–1651 |
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| 15. |
E. A. Gan'shina, L. L. Golik, Z. E. Kun'kova, G. S. Zykov, Yu. V. Markin, Yu. A. Danilov, B. N. Zvonkov, “Phase separation in (Ga,Mn)As layers obtained by ion implantation and subsequent laser annealing”, Fizika Tverdogo Tela, 61:3 (2019), 465–471 ; Phys. Solid State, 61:3 (2019), 332–338 |
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| 16. |
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, A. V. Kudrin, I. L. Kalentyeva, E. A. Larionova, V. A. Koval'skii, O. A. Soltanovich, “Studying magnetic diodes with a GaMnAs layer formed by pulsed laser deposition”, Fizika i Tekhnika Poluprovodnikov, 53:3 (2019), 351–358 ; Semiconductors, 53:3 (2019), 332–338 |
3
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| 17. |
M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, D. A. Pavlov, Yu. V. Usov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov, “Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019), 33–36 ; Tech. Phys. Lett., 45:7 (2019), 668–671 |
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2018 |
| 18. |
E. I. Malysheva, M. V. Dorokhin, Yu. A. Danilov, A. E. Parafin, M. V. Ved, A. V. Kudrin, A. V. Zdoroveyshchev, “Raising the operating temperature of (Ga,Mn)As/GaAs spin light emitting diodes by applying post-growth treatment”, Fizika Tverdogo Tela, 60:11 (2018), 2141–2146 |
1
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| 19. |
Yu. A. Danilov, A. V. Kudrin, V. P. Lesnikov, O. V. Vikhrova, R. N. Kriukov, I. N. Antonov, D. S. Tolkachev, A. V. Alaferdov, Z. E. Kun'kova, M. P. Temiryazeva, A. G. Temiryazev, “The study of features of formation and properties of А$^{3}$В$^{5}$ semiconductors highly doped with iron”, Fizika Tverdogo Tela, 60:11 (2018), 2137–2140 ; Phys. Solid State, 60:11 (2018), 2178–2181 |
5
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| 20. |
Z. E. Kun'kova, E. A. Gan'shina, L. L. Golik, Yu. A. Danilov, A. V. Kudrin, V. I. Kovalev, G. S. Zykov, Yu. V. Markin, O. V. Vikhrova, B. N. Zvonkov, “Phase separation in GaMnAs layers grown by laser pulsed deposition”, Fizika Tverdogo Tela, 60:5 (2018), 940–946 ; Phys. Solid State, 60:5 (2018), 943–949 |
5
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| 21. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, I. N. Antonov, “The effect of the composition of a carrier gas during the growth of a Mn delta-layer on the electrical and magnetic properties of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1286–1290 ; Semiconductors, 52:11 (2018), 1398–1402 |
1
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| 22. |
G. E. Yakovlev, M. V. Dorokhin, V. I. Zubkov, A. L. Dudin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, “Specific features of the electrochemical capacitance–voltage profiling of GaAs LED and pHEMT structures with quantum-confined regions”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 873–880 ; Semiconductors, 52:8 (2018), 1004–1011 |
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2017 |
| 23. |
A. V. Kudrin, Yu. A. Danilov, V. P. Lesnikov, O. V. Vikhrova, D. A. Pavlov, Yu. V. Usov, E. A. Pitirimova, I. N. Antonov, “Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature”, Fizika Tverdogo Tela, 59:11 (2017), 2200–2202 ; Phys. Solid State, 59:11 (2017), 2220–2222 |
3
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| 24. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, P. B. Demina, M. V. Dorokhin, I. L. Kalentyeva, A. V. Kudrin, “Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer”, Fizika Tverdogo Tela, 59:11 (2017), 2196–2199 ; Phys. Solid State, 59:11 (2017), 2216–2219 |
2
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| 25. |
E. I. Malysheva, M. V. Dorokhin, P. B. Demina, A. V. Zdoroveyshchev, A. V. Rykov, M. V. Ved, Yu. A. Danilov, “Control of circular polarization of electroluminescence in spin light-emitting diodes based on InGaAs/GaAs/$\delta$ $\langle$Mn$\rangle$ heterostructures”, Fizika Tverdogo Tela, 59:11 (2017), 2142–2147 ; Phys. Solid State, 59:11 (2017), 2162–2167 |
1
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| 26. |
O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, V. P. Lesnikov, A. V. Nezhdanov, S. A. Pavlov, A. E. Parafin, I. Yu. Pashen'kin, S. M. Plankina, “Modification of the properties of ferromagnetic layers based on A$^{3}$B$^{5}$ compounds by pulsed laser annealing”, Fizika Tverdogo Tela, 59:11 (2017), 2130–2134 ; Phys. Solid State, 59:11 (2017), 2150–2154 |
6
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| 27. |
M. V. Dorokhin, S. V. Zaitsev, A. V. Rykov, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, V. I. Zubkov, D. S. Frolov, G. E. Yakovlev, A. V. Kudrin, “Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence”, Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017), 1539–1544 ; Tech. Phys., 62:10 (2017), 1545–1550 |
4
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| 28. |
M. V. Dorokhin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, “Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties”, Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017), 1389–1394 ; Tech. Phys., 62:9 (2017), 1398–1402 |
1
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| 29. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, M. V. Dorokhin, D. A. Pavlov, I. N. Antonov, M. N. Drozdov, Yu. V. Usov, “Features of the selective manganese doping of GaAs structures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1468–1472 ; Semiconductors, 51:11 (2017), 1415–1419 |
1
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2016 |
| 30. |
Yu. A. Danilov, H. Boudinov, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, S. A. Pavlov, A. E. Parafin, E. A. Pitirimova, R. R. Yakubov, “Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing”, Fizika Tverdogo Tela, 58:11 (2016), 2140–2144 ; Phys. Solid State, 58:11 (2016), 2218–2222 |
4
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| 31. |
S. M. Plankina, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, N. Yu. Konnova, A. V. Nezhdanov, I. Yu. Pashen'kin, “Study of the structures of cleaved cross sections by Raman spectroscopy”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1561–1564 ; Semiconductors, 50:11 (2016), 1539–1542 |
6
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| 32. |
I. L. Kalentyeva, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, A. V. Kudrin, M. N. Drozdov, “Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer $\delta$-doped with Mn”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1490–1496 ; Semiconductors, 50:11 (2016), 1469–1474 |
3
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| 33. |
M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, V. P. Lesnikov, B. N. Zvonkov, A. V. Zdoroveyshchev, A. V. Kudrin, P. B. Demina, Yu. V. Usov, D. E. Nikolichev, R. N. Kriukov, S. Yu. Zubkov, “Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1463–1468 ; Semiconductors, 50:11 (2016), 1443–1448 |
| 34. |
I. L. Kalentyeva, O. V. Vikhrova, A. V. Zdoroveyshchev, Yu. A. Danilov, A. V. Kudrin, “GaAs structures with a gate dielectric based on aluminum-oxide layers”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 204–207 ; Semiconductors, 50:2 (2016), 204–207 |
1
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| 35. |
A. V. Kudrin, Yu. A. Danilov, V. P. Lesnikov, E. A. Pitirimova, “Nonlinear room-temperature Hall effect in $n$-InFeAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016), 63–71 ; Tech. Phys. Lett., 42:1 (2016), 88–92 |
5
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2010 |
| 36. |
S. I. Dorozhkin, M. O. Skvortsova, A. V. Kudrin, B. N. Zvonkov, Yu. A. Danilov, O. V. Vikhrova, “Beatings of Shubnikov-de Haas oscillations in a two-dimensional hole system in an InGaAs quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:6 (2010), 312–317 ; JETP Letters, 91:6 (2010), 292–296   |
4
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2009 |
| 37. |
S. V. Zaitsev, M. V. Dorokhin, A. S. Brichkin, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, V. D. Kulakovskii, “Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009), 730–735 ; JETP Letters, 90:10 (2009), 658–662 |
58
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2008 |
| 38. |
B. A. Aronzon, A. S. Lagutin, V. V. Ryl'kov, V. V. Tugushev, V. N. Men'shov, A. V. Lashkul, R. Laiho, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, “Magnetic properties of $\mathrm{GaAs}/\delta\langle\mathrm{Mn}\rangle/\mathrm{GaAs}/\mathrm{In}_x\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs}$ quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 87:3 (2008), 192–198 ; JETP Letters, 87:3 (2008), 164–169 |
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2007 |
| 39. |
B. A. Aronzon, V. A. Kul'bachinskii, P. V. Gurin, A. B. Davydov, V. V. Ryl'kov, A. B. Granovskii, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, Y. Horikoshi, K. Onomitsu, “Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007), 32–39 ; JETP Letters, 85:1 (2007), 27–33 |
37
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2006 |
| 40. |
E. S. Demidov, Yu. A. Danilov, V. V. Podol'skii, V. P. Lesnikov, M. V. Sapozhnikov, A. I. Suchkov, “Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:12 (2006), 664–667 ; JETP Letters, 83:12 (2006), 568–571 |
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1984 |
| 41. |
V. K. Vasil'ev, O. N. Gorshkov, Yu. A. Danilov, V. S. Tulovchikov, “Characteristic X-Ray Radiation Study
of Disturbances in Low-Lying Levels
in InSb Implanted Single Crystals”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 189–191 |
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1979 |
| 42. |
P. V. Pavlov, Yu. A. Danilov, V. S. Tulovchikov, “Morphological and structural changes of $\mathrm{InSb}$ at ion bombardment”, Dokl. Akad. Nauk SSSR, 248:5 (1979), 1111–1114 |
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