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Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 10, Pages 1539–1544
DOI: https://doi.org/10.21883/JTF.2017.10.44999.1989 (Mi jtf6106) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Physics of nanostructures

Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence

M. V. Dorokhina, S. V. Zaitsevb, A. V. Rykova, A. V. Zdoroveyshcheva, E. I. Malyshevaa, Yu. A. Danilova, V. I. Zubkovc, D. S. Frolovc, G. E. Yakovlevc, A. V. Kudrina

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
c Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (174 kB) Citations (4)
DOI: https://doi.org/10.21883/JTF.2017.10.44999.1989
Abstract: Optical and transport properties of the heterostructure with the InAs/GaAs quantum dots doped with manganese or chromium atoms in the course of growth using metal-organic vapor phase epitaxy (MOVPE) are analyzed. Circularly polarized luminescence was obtained due to doping of quantum dots with the Mn or Cr atoms. The sign of the degree of circular polarization was found to depend on the dopant. The effect is interpreted using specific features of the radiative recombination in quantum dots in the presence of resident electrons and holes.
Received: 12.07.2016
English version:
Technical Physics, 2017, Volume 62, Issue 10, Pages 1545–1550
DOI: https://doi.org/10.1134/S1063784217100085
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Dorokhin, S. V. Zaitsev, A. V. Rykov, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, V. I. Zubkov, D. S. Frolov, G. E. Yakovlev, A. V. Kudrin, “Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence”, Zhurnal Tekhnicheskoi Fiziki, 87:10 (2017), 1539–1544; Tech. Phys., 62:10 (2017), 1545–1550
Citation in format AMSBIB
\Bibitem{DorZaiRyk17}
\by M.~V.~Dorokhin, S.~V.~Zaitsev, A.~V.~Rykov, A.~V.~Zdoroveyshchev, E.~I.~Malysheva, Yu.~A.~Danilov, V.~I.~Zubkov, D.~S.~Frolov, G.~E.~Yakovlev, A.~V.~Kudrin
\paper Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II.~Study of the circularly polarized luminescence
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 87
\issue 10
\pages 1539--1544
\mathnet{http://mi.mathnet.ru/jtf6106}
\crossref{https://doi.org/10.21883/JTF.2017.10.44999.1989}
\elib{https://elibrary.ru/item.asp?id=30067516}
\transl
\jour Tech. Phys.
\yr 2017
\vol 62
\issue 10
\pages 1545--1550
\crossref{https://doi.org/10.1134/S1063784217100085}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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