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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2006, Volume 83, Issue 12, Pages 664–667 (Mi jetpl1333)  

This article is cited in 19 scientific papers (total in 19 papers)

CONDENSED MATTER

Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities

E. S. Demidova, Yu. A. Danilova, V. V. Podol'skiia, V. P. Lesnikova, M. V. Sapozhnikovb, A. I. Suchkovc

a N. I. Lobachevski State University of Nizhni Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences
c Institute of Chemistry of High-Purity Substances RAS
References:
Abstract: The possibility of laser synthesis of diluted magnetic semiconductors based on germanium and silicon doped with manganese or iron up to 10–15 at % has been shown. According to data on the electronic levels of 3d atoms in semiconductors, Mn and Fe impurities are most preferable for realizing ferromagnetism in Ge and Si through the Ruderman-Kittel-Kasuya-Yosida mechanism. Epitaxial Ge and Si layers 50–110 nm in thickness were grown on gallium arsenide or sapphire single crystal substrates heated to 200–480°C. The content of a 3d impurity has been measured by x-ray spectroscopy. The ferromagnetism of layers and high magnetic and acceptor activities of Mn in Ge, as well as of Mn and Fe in Si, are manifested in the observation of the Kerr effect, anomalous Hall effect, high hole conductivity, and anisotropic ferromagnetic resonance at 77–500 K. According to the ferromagnetic resonance data, the Curie point of Ge:Mn and Si:Mn on a GaAs substrate and of Si:Fe on an Al2O3 substrate is no lower than 420, 500, and 77 K, respectively.
Received: 24.03.2006
Revised: 16.05.2006
English version:
Journal of Experimental and Theoretical Physics Letters, 2006, Volume 83, Issue 12, Pages 568–571
DOI: https://doi.org/10.1134/S0021364006120095
Bibliographic databases:
Document Type: Article
PACS: 71.55.Eq, 72.20.My, 75.50.Pp, 76.50.+g, 78.20.Ls
Language: Russian


Citation: E. S. Demidov, Yu. A. Danilov, V. V. Podol'skii, V. P. Lesnikov, M. V. Sapozhnikov, A. I. Suchkov, “Ferromagnetism in epitaxial germanium and silicon layers supersaturated with managanese and iron impurities”, Pis'ma v Zh. Èksper. Teoret. Fiz., 83:12 (2006), 664–667; JETP Letters, 83:12 (2006), 568–571
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  • This publication is cited in the following 19 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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