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Fizika Tverdogo Tela, 2018, Volume 60, Issue 11, Pages 2137–2140
DOI: https://doi.org/10.21883/FTT.2018.11.46653.07NN (Mi ftt9006) 		 
This article is cited in 5 scientific papers (total in 5 papers)

XXII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 12-15, 2018
Semiconductors

The study of features of formation and properties of А$^{3}$В$^{5}$ semiconductors highly doped with iron

Yu. A. Danilova, A. V. Kudrina, V. P. Lesnikova, O. V. Vikhrovaa, R. N. Kriukova, I. N. Antonova, D. S. Tolkacheva, A. V. Alaferdovb, Z. E. Kun'kovac, M. P. Temiryazevac, A. G. Temiryazevc

a Lobachevsky State University of Nizhny Novgorod
b Center for Semiconductor Components and Nanotechnologies, State University of Campinas, Campinas, Brazil
c Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
Full-text PDF (468 kB) Citations (5)
DOI: https://doi.org/10.21883/FTT.2018.11.46653.07NN
Abstract: Layers of InAs, InSb, and GaSb semiconductors highly doped with iron during their growth by the method of pulsed laser deposition are studied experimentally. The best temperatures for layer formation on GaAs (100) substrates are: 250$^{\circ}$C (InSb : Fe), 300$^{\circ}$C (InAs : Fe), and 350$^{\circ}$C (GaSb : Fe). At high Fe concentration (over 10 at %) the layers display ferromagnetic properties expressed in emergence of a hysteresis curve within the magnetic field dependences of the Hall resistance, negative magnetoresistance, and in some cases, ferromagnetic-type magnetization at measurements at room temperature. The atoms of iron do not change the type of layer conductivity; InAs : Fe and InSb : Fe layers possess $n$-type conductivity, and GaSb : Fe layers display $p$-type conductivity due to their intrinsic point defects.
Keywords: B1500A Semiconductor, Hall Resistance, Negative Magnetoresistance, Pulsed Laser Deposition (PLD), Nonlinear Magnetic Field Dependence.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 8.1751.2017/ПЧ
Russian Foundation for Basic Research 17-37-80008_мол_эв_а
16-07-01102_а
English version:
Physics of the Solid State, 2018, Volume 60, Issue 11, Pages 2178–2181
DOI: https://doi.org/10.1134/S1063783418110033
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. A. Danilov, A. V. Kudrin, V. P. Lesnikov, O. V. Vikhrova, R. N. Kriukov, I. N. Antonov, D. S. Tolkachev, A. V. Alaferdov, Z. E. Kun'kova, M. P. Temiryazeva, A. G. Temiryazev, “The study of features of formation and properties of А$^{3}$В$^{5}$ semiconductors highly doped with iron”, Fizika Tverdogo Tela, 60:11 (2018), 2137–2140; Phys. Solid State, 60:11 (2018), 2178–2181
Citation in format AMSBIB
\Bibitem{DanKudLes18}
\by Yu.~A.~Danilov, A.~V.~Kudrin, V.~P.~Lesnikov, O.~V.~Vikhrova, R.~N.~Kriukov, I.~N.~Antonov, D.~S.~Tolkachev, A.~V.~Alaferdov, Z.~E.~Kun'kova, M.~P.~Temiryazeva, A.~G.~Temiryazev
\paper The study of features of formation and properties of А$^{3}$В$^{5}$ semiconductors highly doped with iron
\jour Fizika Tverdogo Tela
\yr 2018
\vol 60
\issue 11
\pages 2137--2140
\mathnet{http://mi.mathnet.ru/ftt9006}
\crossref{https://doi.org/10.21883/FTT.2018.11.46653.07NN}
\elib{https://elibrary.ru/item.asp?id=36903759}
\transl
\jour Phys. Solid State
\yr 2018
\vol 60
\issue 11
\pages 2178--2181
\crossref{https://doi.org/10.1134/S1063783418110033}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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