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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 13, Pages 33–36
DOI: https://doi.org/10.21883/PJTF.2019.13.47955.17812 (Mi pjtf5392) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions

M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, D. A. Pavlov, Yu. V. Usov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (395 kB) Citations (1)
DOI: https://doi.org/10.21883/PJTF.2019.13.47955.17812
Abstract: The current-voltage characteristics of light-emitting diodes based on InGaAs/GaAs heterostructures with an injector made of a diluted magnetic semiconductor (In,Fe)Sb are investigated. The current-voltage characteristics of the (In,Fe)Sb/$n$-GaAs and (In,Fe)Sb/$p$-GaAs structures are analyzed. The band diagrams of heterojunctions are described. It is shown that the studied structures are similar to structures with a Schottky barrier by the current transfer mechanism.
Keywords: diluted magnetic semiconductors, diode structures, A$^{3}$B$^{5}$ heteronanostructures, spin injection.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 8.1751.2017/ПЧ
СП-2450.2018.5
Russian Science Foundation 18-79-10088
Received: 29.03.2019
Revised: 05.04.2019
Accepted: 05.04.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 7, Pages 668–671
DOI: https://doi.org/10.1134/S1063785019070149
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Ved, M. V. Dorokhin, V. P. Lesnikov, D. A. Pavlov, Yu. V. Usov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveyshchev, Yu. A. Danilov, “Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:13 (2019), 33–36; Tech. Phys. Lett., 45:7 (2019), 668–671
Citation in format AMSBIB
\Bibitem{VedDorLes19}
\by M.~V.~Ved, M.~V.~Dorokhin, V.~P.~Lesnikov, D.~A.~Pavlov, Yu.~V.~Usov, A.~V.~Kudrin, P.~B.~Demina, A.~V.~Zdoroveyshchev, Yu.~A.~Danilov
\paper Diode structures based on (In, Fe)Sb/GaAs magnetic heterojunctions
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 13
\pages 33--36
\mathnet{http://mi.mathnet.ru/pjtf5392}
\crossref{https://doi.org/10.21883/PJTF.2019.13.47955.17812}
\elib{https://elibrary.ru/item.asp?id=41131076}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 7
\pages 668--671
\crossref{https://doi.org/10.1134/S1063785019070149}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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