Abstract:
Epitaxial InFeSb/GaAs heterostructures were obtained by laser deposition in vacuum. Investigations by high-resolution transmission electron microscopy and microdiffraction showed that the InFeSb layers are single-crystal and do not contain additional phase inclusions. Study of their magnetotransport properties have revealed that an anomalous Hall effect and a negative magnetoresistance up to room temperature are observed in the structures.
Citation:
A. V. Kudrin, Yu. A. Danilov, V. P. Lesnikov, O. V. Vikhrova, D. A. Pavlov, Yu. V. Usov, E. A. Pitirimova, I. N. Antonov, “Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature”, Fizika Tverdogo Tela, 59:11 (2017), 2200–2202; Phys. Solid State, 59:11 (2017), 2220–2222
\Bibitem{KudDanLes17}
\by A.~V.~Kudrin, Yu.~A.~Danilov, V.~P.~Lesnikov, O.~V.~Vikhrova, D.~A.~Pavlov, Yu.~V.~Usov, E.~A.~Pitirimova, I.~N.~Antonov
\paper Single-phase epitaxial InFeSb layers with a Curie temperature above room temperature
\jour Fizika Tverdogo Tela
\yr 2017
\vol 59
\issue 11
\pages 2200--2202
\mathnet{http://mi.mathnet.ru/ftt9401}
\elib{https://elibrary.ru/item.asp?id=30554687}
\transl
\jour Phys. Solid State
\yr 2017
\vol 59
\issue 11
\pages 2220--2222
\crossref{https://doi.org/10.1134/S1063783417110178}
Linking options:
https://www.mathnet.ru/eng/ftt9401
https://www.mathnet.ru/eng/ftt/v59/i11/p2200
This publication is cited in the following 3 articles:
Yu. M. Kuznetsov, M. V. Dorokhin, A. V. Zdoroveyshchev, A. V. Kudrin, P. B. Demina, D. A. Zdoroveyshchev, “Galvanomagnetic and thermomagnetic phenomena in thin metal CoPt films”, Phys. Usp., 66:3 (2023), 312–319
Y Kuznetsov, M Dorokhin, A. Kudrin, M Ved, V Lesnikov, “Anomalous Nernst-Ettingshausen effect in diluted magnetic semiconductors”, J. Phys.: Conf. Ser., 1695:1 (2020), 012145
Yu. A. Danilov, A. V. Kudrin, V. P. Lesnikov, O. V. Vikhrova, R. N. Kriukov, I. N. Antonov, D. S. Tolkachev, A. V. Alaferdov, Z. E. Kun'kova, M. P. Temiryazeva, A. G. Temiryazev, “The study of features of formation and properties of А3В5 semiconductors highly doped with iron”, Phys. Solid State, 60:11 (2018), 2178–2181