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Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 87, Issue 9, Pages 1389–1394
DOI: https://doi.org/10.21883/JTF.2017.09.44915.1988 (Mi jtf6132) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Physics of nanostructures

Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties

M. V. Dorokhin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (503 kB) Citations (1)
DOI: https://doi.org/10.21883/JTF.2017.09.44915.1988
Abstract: The optical properties of InGaAs/GaAs quantum dot heterostructures that are doped by manganese and chromium during growth by Metal-organic vapor phase epitaxy have been studied. Surface topography photoluminescence spectra measurements have demonstrated the possibility of controlling the spectral characteristics of the structure by varying quantum well growth conditions and sizes in the presence of impurity atoms. Research results are explained by the peculiarities of InAs nanoclusters formation on the GaAs surface in the presence of Mn and Cr atoms.
Received: 12.07.2016
English version:
Technical Physics, 2017, Volume 62, Issue 9, Pages 1398–1402
DOI: https://doi.org/10.1134/S1063784217090055
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Dorokhin, A. V. Zdoroveyshchev, E. I. Malysheva, Yu. A. Danilov, “Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties”, Zhurnal Tekhnicheskoi Fiziki, 87:9 (2017), 1389–1394; Tech. Phys., 62:9 (2017), 1398–1402
Citation in format AMSBIB
\Bibitem{DorZdoMal17}
\by M.~V.~Dorokhin, A.~V.~Zdoroveyshchev, E.~I.~Malysheva, Yu.~A.~Danilov
\paper Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 87
\issue 9
\pages 1389--1394
\mathnet{http://mi.mathnet.ru/jtf6132}
\crossref{https://doi.org/10.21883/JTF.2017.09.44915.1988}
\elib{https://elibrary.ru/item.asp?id=29966129}
\transl
\jour Tech. Phys.
\yr 2017
\vol 62
\issue 9
\pages 1398--1402
\crossref{https://doi.org/10.1134/S1063784217090055}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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