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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 204–207
(Mi phts6538)
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This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
GaAs structures with a gate dielectric based on aluminum-oxide layers
I. L. Kalentyeva, O. V. Vikhrova, A. V. Zdoroveyshchev, Yu. A. Danilov, A. V. Kudrin Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
Different types of dielectrics obtained by low-temperature electron-beam sputtering are studied; these dielectrics include Al$_{2}$O$_{3}$ layers and Al$_{2}$O$_{3}$/SiO$_{2}$/Al$_{2}$O$_{3}$ three-layer compositions. The dependence of the electrical strength of Al$_{2}$O$_{3}$ layers on their thickness is determined. It is established that formation of the three-layer dielectric Al$_{2}$O$_{3}$/SiO$_{2}$/Al$_{2}$O$_{3}$ makes it possible to increase the range of operating voltages up to 60 V for structures with a gate electrode. It is shown that it is possible to control the density of charge carriers (holes) in the two-dimensional conduction channel of GaAs structures by changing the gate voltage when the Al$_{2}$O$_{3}$/SiO$_{2}$/Al$_{2}$O$_{3}$ structure is used as a gate dielectric.
Keywords:
GaAs, Gate Dielectric, Electrical Strength, Indium Content, Hall Resistance.
Received: 21.05.2015 Accepted: 05.06.2015
Citation:
I. L. Kalentyeva, O. V. Vikhrova, A. V. Zdoroveyshchev, Yu. A. Danilov, A. V. Kudrin, “GaAs structures with a gate dielectric based on aluminum-oxide layers”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 204–207; Semiconductors, 50:2 (2016), 204–207
Linking options:
https://www.mathnet.ru/eng/phts6538 https://www.mathnet.ru/eng/phts/v50/i2/p204
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