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This article is cited in 4 scientific papers (total in 4 papers)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Magnetism
Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing
Yu. A. Danilovabc, H. Boudinovc, O. V. Vikhrovab, A. V. Zdoroveyshchevb, A. V. Kudrinab, S. A. Pavlovd, A. E. Parafinad, E. A. Pitirimovaa, R. R. Yakubova a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Institute of Physics, Universidade Federal do Rio Grande do Sul,
Porto Alegre, Brazil
d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
It is shown that (Ga,Mn)As layers formed by Mn$^+$ ion implantation into GaAs and subsequent annealing by an excimer laser pulse with an energy density to 200–300 mJ/cm$^2$ feature the properties of the $p$-type semiconductor and ferromagnetic properties. The threshold dose of implanted ions ($\sim$10$^{15}$ cm$^{-2}$) for activating Mn acceptors is determined. The sheet hole concentration and the Curie temperature increase with further increasing Mn$^+$ ion dose. Hysteresis loops in the magnetic field dependences of the Hall effect, the negative magnetoresistance, and magnetic and structural studies suggest that the layers are analogues of single-phase ferromagnetic compounds (Ga,Mn)As formed by low-temperature molecular beam epitaxy.
Citation:
Yu. A. Danilov, H. Boudinov, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, S. A. Pavlov, A. E. Parafin, E. A. Pitirimova, R. R. Yakubov, “Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing”, Fizika Tverdogo Tela, 58:11 (2016), 2140–2144; Phys. Solid State, 58:11 (2016), 2218–2222
Linking options:
https://www.mathnet.ru/eng/ftt9775 https://www.mathnet.ru/eng/ftt/v58/i11/p2140
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