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Fizika Tverdogo Tela, 2016, Volume 58, Issue 11, Pages 2140–2144 (Mi ftt9775)  
This article is cited in 4 scientific papers (total in 4 papers)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Magnetism

Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

Yu. A. Danilovabc, H. Boudinovc, O. V. Vikhrovab, A. V. Zdoroveyshchevb, A. V. Kudrinab, S. A. Pavlovd, A. E. Parafinad, E. A. Pitirimovaa, R. R. Yakubova

a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Institute of Physics, Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil
d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Full-text PDF (678 kB) Citations (4)
Abstract: It is shown that (Ga,Mn)As layers formed by Mn$^+$ ion implantation into GaAs and subsequent annealing by an excimer laser pulse with an energy density to 200–300 mJ/cm$^2$ feature the properties of the $p$-type semiconductor and ferromagnetic properties. The threshold dose of implanted ions ($\sim$10$^{15}$ cm$^{-2}$) for activating Mn acceptors is determined. The sheet hole concentration and the Curie temperature increase with further increasing Mn$^+$ ion dose. Hysteresis loops in the magnetic field dependences of the Hall effect, the negative magnetoresistance, and magnetic and structural studies suggest that the layers are analogues of single-phase ferromagnetic compounds (Ga,Mn)As formed by low-temperature molecular beam epitaxy.
English version:
Physics of the Solid State, 2016, Volume 58, Issue 11, Pages 2218–2222
DOI: https://doi.org/10.1134/S1063783416110056
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. A. Danilov, H. Boudinov, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, S. A. Pavlov, A. E. Parafin, E. A. Pitirimova, R. R. Yakubov, “Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing”, Fizika Tverdogo Tela, 58:11 (2016), 2140–2144; Phys. Solid State, 58:11 (2016), 2218–2222
Citation in format AMSBIB
\Bibitem{DanBouVik16}
\by Yu.~A.~Danilov, H.~Boudinov, O.~V.~Vikhrova, A.~V.~Zdoroveyshchev, A.~V.~Kudrin, S.~A.~Pavlov, A.~E.~Parafin, E.~A.~Pitirimova, R.~R.~Yakubov
\paper Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing
\jour Fizika Tverdogo Tela
\yr 2016
\vol 58
\issue 11
\pages 2140--2144
\mathnet{http://mi.mathnet.ru/ftt9775}
\elib{https://elibrary.ru/item.asp?id=27368812}
\transl
\jour Phys. Solid State
\yr 2016
\vol 58
\issue 11
\pages 2218--2222
\crossref{https://doi.org/10.1134/S1063783416110056}
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  • https://www.mathnet.ru/eng/ftt/v58/i11/p2140
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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