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Publications in Math-Net.Ru |
Citations |
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2021 |
1. |
I. P. Sotnikov, K. P. Kotlyar, R. R. Reznik, V. O. Gridchin, V. V. Lendyashova, A. V. Vershinin, V. V. Lysak, D. A. Kirilenko, N. A. Bert, G. E. Cirlin, “Specific features of structural stresses in InGaN/GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 785–788 ; Semiconductors, 55:10 (2021), 795–798 |
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2. |
I. V. Ilkiv, K. P. Kotlyar, D. A. Kirilenko, A. V. Osipov, I. P. Sotnikov, A. N. Terpitsky, G. E. Cirlin, “Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 621–624 ; Semiconductors, 55:8 (2021), 678–681 |
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3. |
V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, A. S. Dragunova, N. V. Kryzhanovskaya, A. Yu. Serov, S. A. Kukushkin, G. E. Cirlin, “MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 32–35 |
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4. |
A. S. Kulagina, V. N. Trukhin, D. D. Stupin, A. L. Chernev, M. V. Dubina, G. E. Cirlin, “Complex refractive of the spectra index of mononucleotide films on silicon in the terahertz range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:17 (2021), 29–31 ; Tech. Phys. Lett., 47:12 (2021), 862–864 |
5. |
R. R. Reznik, K. M. Morozov, I. L. Krestnikov, K. P. Kotlyar, I. P. Sotnikov, L. Leandro, N. Akopian, G. E. Cirlin, “Directional radiation from GaAs quantum dots in AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021), 47–50 ; Tech. Phys. Lett., 47:5 (2021), 405–408 |
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2020 |
6. |
A. S. Kulagina, A. I. Khrebtov, A. A. Ryzhov, V. V. Danilov, I. V. Shtrom, K. P. Kotlyar, P. A. Alekseev, A. N. Smirnov, R. R. Reznik, G. E. Cirlin, “Nonlinear bleaching of InAs nanowires in the visible range”, Optics and Spectroscopy, 128:1 (2020), 128–133 ; Optics and Spectroscopy, 128:1 (2020), 125–130 |
7. |
A. S. Kulagina, A. I. Khrebtov, R. R. Reznik, E. V. Ubyivovk, A. P. Litvin, I. D. Skurlov, G. E. Cirlin, E. N. Bodunov, V. V. Danilov, “The significance of fitting in the description of luminescence kinetics of hybrid nanowires”, Optics and Spectroscopy, 128:1 (2020), 122–127 ; Optics and Spectroscopy, 128:1 (2020), 119–124 |
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8. |
A. I. Khrebtov, A. S. Kulagina, V. V. Danilov, E. S. Gromova, I. D. Skurlov, A. P. Litvin, R. R. Reznik, I. V. Shtrom, G. E. Cirlin, “Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ÒÎÐÎ-CdSe/ZnS quantum dots”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 952–957 ; Semiconductors, 54:9 (2020), 1141–1146 |
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9. |
G. E. Cirlin, R. R. Reznik, A. E. Zhukov, R. A. Khabibullin, K. V. Marem'yanin, V. I. Gavrilenko, S. V. Morozov, “Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 902–905 ; Semiconductors, 54:9 (2020), 1092–1095 |
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10. |
R. R. Reznik, V. O. Gridchin, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 884–887 ; Semiconductors, 54:9 (2020), 1075–1077 |
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11. |
V. G. Dubrovskii, R. R. Reznik, N. V. Kryzhanovskaya, I. V. Shtrom, E. D. Ubyivovk, I. P. Soshnikov, G. E. Cirlin, “MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition”, Fizika i Tekhnika Poluprovodnikov, 54:6 (2020), 542 ; Semiconductors, 54:6 (2020), 650–653 |
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12. |
V. O. Gridchin, K. P. Kotlyar, R. R. Reznik, L. N. Dvoretskaya, A. V. Parfeneva, I. S. Mukhin, G. E. Cirlin, “Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020), 32–35 ; Tech. Phys. Lett., 46:11 (2020), 1080–1083 |
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2019 |
13. |
A. I. Khrebtov, R. R. Reznik, E. V. Ubyivovk, A. P. Litvin, I. D. Skurlov, P. S. Parfenov, A. S. Kulagina, V. V. Danilov, G. E. Cirlin, “Nonradiative energy transfer in hybrid nanostructures with varied dimensionality”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1289–1292 ; Semiconductors, 53:9 (2019), 1258–1261 |
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14. |
R. R. Reznik, K. P. Kotlyar, N. V. Kryzhanovskaya, S. V. Morozov, G. E. Cirlin, “Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019), 48–50 ; Tech. Phys. Lett., 45:11 (2019), 1111–1113 |
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15. |
N. R. Grigor'eva, I. V. Shtrom, R. V. Grigor'ev, I. P. Soshnikov, R. R. Reznik, Yu. B. Samsonenko, N. V. Sibirev, G. E. Cirlin, “The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019), 37–40 ; Tech. Phys. Lett., 45:8 (2019), 835–838 |
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2018 |
16. |
V. N. Kats, A. V. Platonov, G. E. Cirlin, A. D. Bouravlev, A. Delga, L. Besombes, H. Mariette, V. P. Kochereshko, “Polarization spectroscopy of an isolated quantum dot and an isolated quantum wire”, Fizika Tverdogo Tela, 60:12 (2018), 2445–2449 ; Phys. Solid State, 60:12 (2018), 2623–2627 |
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17. |
P. V. Petrov, I. A. Kokurin, Yu. L. Ivanov, G. E. Cirlin, V. E. Sedov, N. S. Averkiev, “Fine structure of levels and piezospectroscopy of A$^{+}$ centers in GaAs/AlGaAs quantum wells”, Fizika Tverdogo Tela, 60:2 (2018), 333–340 ; Phys. Solid State, 30:2 (2018), 339–346 |
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18. |
P. A. Alekseev, M. S. Dunaevskii, A. O. Mikhailov, S. P. Lebedev, A. A. Lebedev, I. V. Ilkiv, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin, “Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1507–1511 ; Semiconductors, 52:12 (2018), 1611–1615 |
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19. |
N. V. Sibirev, K. P. Kotlyar, A. A. Koryakin, I. V. Shtrom, E. V. Ubyivovk, I. P. Soshnikov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “Solar cell based on core/shell nanowires”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1464–1468 ; Semiconductors, 52:12 (2018), 1568–1572 |
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20. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. P. Lebedev, A. A. Lebedev, D. A. Kirilenko, P. A. Alekseev, G. E. Cirlin, “MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1317–1320 ; Semiconductors, 52:11 (2018), 1428–1431 |
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21. |
G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Sotnikov, D. A. Kirilenko, N. V. Kryzhanovskaya, “Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1304–1307 ; Semiconductors, 52:11 (2018), 1416–1419 |
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22. |
R. R. Reznik, K. P. Kotlyar, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 522 ; Semiconductors, 52:5 (2018), 651–653 |
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23. |
P. A. Alekseev, V. A. Sharov, P. Geydt, M. S. Dunaevskiy, I. P. Soshnikov, R. R. Reznik, V. V. Lysak, E. Lähderanta, G. E. Cirlin, “GaAs wurtzite nanowires for hybrid piezoelectric solar cells”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 511 ; Semiconductors, 52:5 (2018), 609–611 |
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24. |
I. P. Soshnikov, K. P. Kotlyar, N. A. Bert, D. A. Kirilenko, A. D. Bouravlev, G. E. Cirlin, “The features of GaAs nanowire SEM images”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 510 ; Semiconductors, 52:5 (2018), 605–608 |
25. |
I. V. Shtrom, N. G. Filosofov, V. F. Agekyan, M. B. Smirnov, A. Yu. Serov, R. R. Reznik, K. E. Kudryavtsev, G. E. Cirlin, “Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 509 ; Semiconductors, 52:5 (2018), 602–604 |
26. |
A. M. Mozharov, A. A. Vasiliev, A. D. Bolshakov, G. A. Sapunov, V. V. Fedorov, G. E. Cirlin, I. S. Mukhin, “Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 475 ; Semiconductors, 52:4 (2018), 489–492 |
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27. |
G. E. Cirlin, R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, Yu. B. Samsonenko, S. A. Kukushkin, T. Kasama, N. Akopian, “Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 469 ; Semiconductors, 52:4 (2018), 462–464 |
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28. |
V. N. Trukhin, A. D. Bouravlev, I. A. Mustafin, G. E. Cirlin, J. P. Kakko, H. Lipsanen, “Ultrafast dynamics of photoinduced electron–hole plasma in semiconductor nanowires”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 23–27 ; Semiconductors, 52:1 (2018), 19–23 |
29. |
I. V. Shtrom, N. V. Sibirev, E. V. Ubyivovk, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases”, Fizika i Tekhnika Poluprovodnikov, 52:1 (2018), 5–9 ; Semiconductors, 52:1 (2018), 1–5 |
30. |
R. R. Reznik, G. E. Cirlin, I. V. Shtrom, A. I. Khrebtov, I. P. Sotnikov, N. V. Kryzhanovskaya, È. I. Moiseev, A. E. Zhukov, “Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 55–61 ; Tech. Phys. Lett., 44:2 (2018), 112–114 |
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2017 |
31. |
V. N. Trukhin, A. D. Bouravlev, I. A. Mustafin, G. E. Cirlin, J. P. Kakko, H. Lipsanen, “Ultrafast dynamics of photoinduced electron–hole plasma in semiconductor nanowires”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1631 ; Semiconductors, 52:1 (2018), 19–23 |
32. |
I. V. Shtrom, N. V. Sibirev, E. V. Ubyivovk, Yu. B. Samsonenko, A. I. Khrebtov, R. R. Reznik, A. D. Bouravlev, G. E. Cirlin, “GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases”, Fizika i Tekhnika Poluprovodnikov, 51:12 (2017), 1587 ; Semiconductors, 52:1 (2018), 1–5 |
33. |
R. R. Reznik, K. P. Kotlyar, I. V. Shtrom, I. P. Sotnikov, S. A. Kukushkin, A. V. Osipov, G. E. Cirlin, “MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1525–1529 ; Semiconductors, 51:11 (2017), 1472–1476 |
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34. |
R. A. Khabibullin, N. V. Shchavruk, A. N. Klochkov, I. A. Glinskiy, N. V. Zenchenko, D. S. Ponomarev, P. P. Maltsev, A. A. Zaitsev, F. I. Zubov, A. E. Zhukov, G. E. Cirlin, Zh. I. Alferov, “Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 540–546 ; Semiconductors, 51:4 (2017), 514–519 |
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35. |
V. G. Talalaev, V. I. Shtrom, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin, “Directional emission from beryllium doped GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017), 71–77 ; Tech. Phys. Lett., 43:9 (2017), 811–813 |
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36. |
A. V. Ikonnikov, K. V. Marem'yanin, S. V. Morozov, V. I. Gavrilenko, A. Yu. Pavlov, N. V. Shchavruk, R. A. Khabibullin, R. R. Reznik, G. E. Cirlin, F. I. Zubov, A. E. Zhukov, Zh. I. Alferov, “Terahertz radiation generation in multilayer quantum-cascade heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017), 86–94 ; Tech. Phys. Lett., 43:4 (2017), 362–365 |
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2016 |
37. |
I. P. Sotnikov, A. A. Semenov, P. Yu. Belyavskii, I. V. Shtrom, K. P. Kotlyar, V. V. Lisak, D. A. Kudriashov, S. I. Pavlov, A. V. Nashchekin, G. E. Cirlin, “Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition”, Fizika Tverdogo Tela, 58:12 (2016), 2314–2318 ; Phys. Solid State, 58:12 (2016), 2401–2405 |
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38. |
R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, E. V. Nikitina, G. E. Cirlin, “Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy”, Fizika Tverdogo Tela, 58:10 (2016), 1886–1889 ; Phys. Solid State, 58:10 (2016), 1952–1955 |
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39. |
A. V. Platonov, V. P. Kochereshko, V. N. Kats, G. E. Cirlin, A. D. Bouravlev, D. V. Avdoshina, A. Delga, L. Besombes, H. Mariette, “Polarization of the photoluminescence of quantum dots incorporated into quantum wires”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1675–1678 ; Semiconductors, 50:12 (2016), 1647–1650 |
40. |
I. V. Shtrom, A. D. Bouravlev, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Sotnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen, “Surface passivation of GaAs nanowires by the atomic layer deposition of AlN”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1644–1646 ; Semiconductors, 50:12 (2016), 1619–1621 |
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41. |
V. N. Trukhin, A. D. Bouravlev, I. A. Mustafin, G. E. Cirlin, D. I. Kuritsyn, V. V. Rumyantsev, S. V. Morozov, J. P. Kakko, T. Huhtio, H. Lipsanen, “Resonant features of the terahertz generation in semiconductor nanowires”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1587–1591 ; Semiconductors, 50:12 (2016), 1561–1565 |
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42. |
A. M. Mozharov, D. A. Kudriashov, A. D. Bolshakov, G. E. Cirlin, A. S. Gudovskikh, I. S. Mukhin, “Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1543–1547 ; Semiconductors, 50:11 (2016), 1521–1525 |
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43. |
G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, I. P. Sotnikov, “Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1441–1444 ; Semiconductors, 50:11 (2016), 1421–1424 |
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44. |
R. A. Khabibullin, N. V. Shchavruk, A. Yu. Pavlov, D. S. Ponomarev, K. N. Tomosh, R. R. Galiev, P. P. Maltsev, A. E. Zhukov, G. E. Cirlin, F. I. Zubov, Zh. I. Alferov, “Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1395–1400 ; Semiconductors, 50:10 (2016), 1377–1382 |
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45. |
A. E. Zhukov, G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, M. A. Kaliteevskii, K. A. Ivanov, N. V. Kryzhanovskaya, M. V. Maksimov, Zh. I. Alferov, “Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range”, Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 674–678 ; Semiconductors, 50:5 (2016), 662–666 |
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2015 |
46. |
V. N. Trukhin, A. S. Buyskih, A. D. Bouravlev, I. A. Mustafin, Yu. B. Samsonenko, A. V. Trukhin, G. E. Cirlin, M. A. Kaliteevski, D. A. Zeze, A. J. Gallant, “Generation of THz radiation by AlGaAs nanowires”, Pis'ma v Zh. Èksper. Teoret. Fiz., 102:5 (2015), 348–353 ; JETP Letters, 102:5 (2015), 316–320 |
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