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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1304–1307
DOI: https://doi.org/10.21883/FTP.2018.11.46588.10 (Mi phts5685) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon

G. E. Cirlinabcd, R. R. Reznikc, Yu. B. Samsonenkoab, A. I. Khrebtovac, K. P. Kotlyara, I. V. Ilkiva, I. P. Sotnikovabd, D. A. Kirilenkod, N. V. Kryzhanovskayaa

a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Ioffe Institute, St. Petersburg
Full-text PDF (962 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.11.46588.10
Abstract: Data on the growth and physical properties of nanostructures of the type “InAsP insert embedded in InP nanowire (NW)” grown on Si (111) surfaces by Au-assisted molecular-beam epitaxy are presented. It is found that nearly 100%-coherent NWs can be grown with a widely varying surface density. A relationship between the optical and structural properties of the NWs is revealed. It is shown that the NWs under study are formed of a purely wurtzite phase. The suggested technology opens up new opportunities for the integration of direct-gap III–V materials and silicon.
Keywords: Molecular Beam Epitaxy (MBE), Nanowires (NWs), Wurtzite Phase, Average Arsenic Content, Triple Boundary.
Funding agency Grant number
Russian Science Foundation 14-12-00393
Russian Foundation for Basic Research 18-32-00768 мол_а
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1416–1419
DOI: https://doi.org/10.1134/S1063782618110258
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. E. Cirlin, R. R. Reznik, Yu. B. Samsonenko, A. I. Khrebtov, K. P. Kotlyar, I. V. Ilkiv, I. P. Sotnikov, D. A. Kirilenko, N. V. Kryzhanovskaya, “Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1304–1307; Semiconductors, 52:11 (2018), 1416–1419
Citation in format AMSBIB
\Bibitem{CirRezSam18}
\by G.~E.~Cirlin, R.~R.~Reznik, Yu.~B.~Samsonenko, A.~I.~Khrebtov, K.~P.~Kotlyar, I.~V.~Ilkiv, I.~P.~Sotnikov, D.~A.~Kirilenko, N.~V.~Kryzhanovskaya
\paper Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1304--1307
\mathnet{http://mi.mathnet.ru/phts5685}
\crossref{https://doi.org/10.21883/FTP.2018.11.46588.10}
\elib{https://elibrary.ru/item.asp?id=36903603}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1416--1419
\crossref{https://doi.org/10.1134/S1063782618110258}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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