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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 21, Pages 32–35
DOI: https://doi.org/10.21883/PJTF.2021.21.51626.18894 (Mi pjtf4639) 		 
This article is cited in 2 scientific papers (total in 2 papers)

MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates

V. O. Gridchinab, R. R. Reznikb, K. P. Kotlyarab, A. S. Dragunovaac, N. V. Kryzhanovskayaac, A. Yu. Serovb, S. A. Kukushkind, G. E. Cirlinabe

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Saint Petersburg State University
c National Research University "Higher School of Economics", St. Petersburg Branch
d Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
e Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
Full-text PDF (561 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2021.21.51626.18894
Abstract: In this work, InGaN nanowires with a high In content were grown, for the first time, on hybrid SiC/Si substrates and compared with InGaN nanowires grown on Si. It was shown that InGaN nanowires on SiC/Si have lower indium content (by about 10%) compared to the nanowires on Si. The results can be beneficial for studying the growth mechanisms of InGaN nanowires and creating optoelectronic devices in the visible spectral range.
Keywords: InGaN, nanowires, molecular beam epitaxy, SiC/Si, morphological properties, optical properties, miscibility gap, silicon carbide on silicon.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0791-2020-0003
Russian Science Foundation 19-72-30010
HSE Basic Research Program
Received: 01.06.2021
Revised: 12.07.2021
Accepted: 19.07.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, A. S. Dragunova, N. V. Kryzhanovskaya, A. Yu. Serov, S. A. Kukushkin, G. E. Cirlin, “MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021), 32–35
Citation in format AMSBIB
\Bibitem{GriRezKot21}
\by V.~O.~Gridchin, R.~R.~Reznik, K.~P.~Kotlyar, A.~S.~Dragunova, N.~V.~Kryzhanovskaya, A.~Yu.~Serov, S.~A.~Kukushkin, G.~E.~Cirlin
\paper MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 21
\pages 32--35
\mathnet{http://mi.mathnet.ru/pjtf4639}
\crossref{https://doi.org/10.21883/PJTF.2021.21.51626.18894}
\elib{https://elibrary.ru/item.asp?id=46640007}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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