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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 3, Pages 55–61
DOI: https://doi.org/10.21883/PJTF.2018.03.45579.16991 (Mi pjtf5896) 		 
This article is cited in 12 scientific papers (total in 12 papers)

Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy

R. R. Reznikabcd, G. E. Cirlinabcd, I. V. Shtromab, A. I. Khrebtova, I. P. Sotnikovabe, N. V. Kryzhanovskayaa, È. I. Moiseeva, A. E. Zhukova

a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Peter the Great St. Petersburg Polytechnic University
e Ioffe Institute, St. Petersburg
Full-text PDF (196 kB) Citations (12)
DOI: https://doi.org/10.21883/PJTF.2018.03.45579.16991
Abstract: Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of $\sim$1.3 $\mu$m at room temperature.
Funding agency Grant number
Russian Science Foundation 14-12-00393
Russian Foundation for Basic Research 16-29-03113-офи
Ministry of Education and Science of the Russian Federation 3.9787.2017/8.9
16.9791.2017/8.9
Received: 28.07.2017
English version:
Technical Physics Letters, 2018, Volume 44, Issue 2, Pages 112–114
DOI: https://doi.org/10.1134/S1063785018020116
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. R. Reznik, G. E. Cirlin, I. V. Shtrom, A. I. Khrebtov, I. P. Sotnikov, N. V. Kryzhanovskaya, È. I. Moiseev, A. E. Zhukov, “Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018), 55–61; Tech. Phys. Lett., 44:2 (2018), 112–114
Citation in format AMSBIB
\Bibitem{RezCirSht18}
\by R.~R.~Reznik, G.~E.~Cirlin, I.~V.~Shtrom, A.~I.~Khrebtov, I.~P.~Sotnikov, N.~V.~Kryzhanovskaya, \`E.~I.~Moiseev, A.~E.~Zhukov
\paper Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 3
\pages 55--61
\mathnet{http://mi.mathnet.ru/pjtf5896}
\crossref{https://doi.org/10.21883/PJTF.2018.03.45579.16991}
\elib{https://elibrary.ru/item.asp?id=32740197}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 2
\pages 112--114
\crossref{https://doi.org/10.1134/S1063785018020116}
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    • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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