Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 4, Page 469 (Mi phts5865)  
This article is cited in 10 scientific papers (total in 10 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Optoelectronics, optical properties

Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources

G. E. Cirlinabcd, R. R. Reznikabcd, I. V. Shtromac, A. I. Khrebtovab, Yu. B. Samsonenkoabc, S. A. Kukushkine, T. Kasamaf, N. Akopianf

a St. Petersburg Academic University, Russian Academy of Sciences, 194021 St. Petersburg, Russia
b ITMO University, 197101 St. Petersburg, Russia
c Institute for Analytical Instrumentation, Russian Academy of Sciences, 190103 St. Petersburg, Russia
d Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia
e Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, 199178 St. Petersburg, Russia
f DTU Photonics,Technical University of Denmark, Kgs. Lyngby, Denmark 2800
Full-text PDF (29 kB) Citations (10)
Abstract: III–V nanowires, or a combination of the nanowires with quantum dots, are promising building blocks for future optoelectronic devices, in particular, single-photon emitters, lasers and photodetectors. In this work we present results of molecular beam epitaxial growth of combined nanostructures containing GaAs quantum dots inside AlGaAs nanowires on a silicon substrate showing a new way to combine quantum devices with Si technology.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.2483.2017/4.6
Russian Science Foundation 14-12-00393
We are grateful for the support of the Ministry of education and science of Russian Federation (state task, project No 16.2483.2017/4.6). The nanowire samples were grown under the support of Russian Science Foundation (Project No 14-12-00393).
English version:
Semiconductors, 2018, Volume 52, Issue 4, Pages 462–464
DOI: https://doi.org/10.1134/S1063782618040103
Bibliographic databases:
Document Type: Article
Language: English
Citation: G. E. Cirlin, R. R. Reznik, I. V. Shtrom, A. I. Khrebtov, Yu. B. Samsonenko, S. A. Kukushkin, T. Kasama, N. Akopian, “Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 469; Semiconductors, 52:4 (2018), 462–464
Citation in format AMSBIB
\Bibitem{CirRezSht18}
\by G.~E.~Cirlin, R.~R.~Reznik, I.~V.~Shtrom, A.~I.~Khrebtov, Yu.~B.~Samsonenko, S.~A.~Kukushkin, T.~Kasama, N.~Akopian
\paper Hybrid GaAs/AlGaAs nanowire -- quantum dot system for single photon sources
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 4
\pages 469
\mathnet{http://mi.mathnet.ru/phts5865}
\elib{https://elibrary.ru/item.asp?id=32740464}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 4
\pages 462--464
\crossref{https://doi.org/10.1134/S1063782618040103}
Linking options:
  • https://www.mathnet.ru/eng/phts5865
  • https://www.mathnet.ru/eng/phts/v52/i4/p469
    • This publication is cited in the following 10 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:37
    Full-text PDF :7
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024